We use transmission electron microscopy to characterize the morphology of InGaP epitaxial layers grown by metal-organic vapor-phase epitaxy over misoriented GaAs (001) substrates, with a cutoff angle in a range from 0° to 25°. The occurrence of phase separation and CuPt-type ordered superstructures has been observed. The most ordered configuration has been found to appear in layers grown on 2° off substrates, and the strength of order decreases with increasing the misorientation angle beyond α=2°. Conversely, whereas the phase separation is less evident in the layer grown at 2°, the sample grown with a misorientation of 25° exhibits the most phase separated configuration. The completion between these two phenomena is discussed depending on the misorientation angle. © 1996 American Institute of Physics.
|Journal||Journal of Applied Physics|
|Publication status||Published - 1 Oct 1996|
Diéguez, A., Peiró, F., Cornet, A., Morante, J. R., Alsina, F., & Pascual, J. (1996). Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers. Journal of Applied Physics, 80(7), 3798-3803. https://doi.org/10.1063/1.363332