Competing degradation mechanisms in short-channel transistors under channel hot-carrier stress at elevated temperatures

Esteve Amat, Thomas Kauerauf, Robin Degraeve, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Guido Groeseneken

Research output: Contribution to journalArticleResearchpeer-review

32 Citations (Scopus)

Abstract

The temperature dependence of channel hot-carrier (CHC) degradation in n-MOS transistors with high- $k$ dielectrics has been studied. The analysis starts from the most damaging CHC stress conditions at room temperature ($V-{G} = V-{D}/\hbox{2}$ for long channels and $V-{G} = V-{D}$ for short channels). We find that, for long-channel transistors, the CHC degradation decreases at high temperature, while for short-channel transistors, an increase is observed. In this paper, a new picture to explain the observed increment of CHC damage with temperature for short-channel transistors with high-$k$ dielectric is presented. We demonstrate that the total CHC degradation consists of two components: the classical CHC damage located at the drain side and the degradation produced by the voltage drop over the gate dielectric, which can be considered a positive bias temperature instability (PBTI) effect. Particularly for short transistors stressed at high temperatures, this PBTI component dominates the total CHC degradation. © 2006 IEEE.
Original languageEnglish
Article number5075549
Pages (from-to)454-458
JournalIEEE Transactions on Device and Materials Reliability
Volume9
DOIs
Publication statusPublished - 1 Sep 2009

Keywords

  • Charge pumping (CP)
  • High temperature
  • High-k dielectrics
  • Hot carriers
  • Reliability.

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