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Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performance

L. Aguilera, J. Martín-Martínez, M. Porti, R. Rodríguez, M. Cambrea, F. Crupi, M. Nafría, X. Aymerich

Research output: Contribution to journal › Article › Research › peer-review

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