Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performance

L. Aguilera; J. Martín-Martínez; M. Porti; R. Rodríguez; M. Cambrea; F. Crupi; M. Nafría; X. Aymerich

doi:https://doi.org/10.1016/j.mee.2007.04.093

Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performance

L. Aguilera, J. Martín-Martínez, M. Porti, R. Rodríguez, M. Cambrea, F. Crupi, M. Nafría, X. Aymerich

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

Abstract

In this work, the electrical properties of stressed NMOSFETs with different gate electrodes (Polysilicon and TiN) and HfSiON gate dielectric have been compared. The results show that TiN gated devices are less sensitive to electrical stress. The SPICE parameters of degraded and broken-down devices have been extracted to simulate the impact of wear-out and dielectric breakdown in the response of different current mirror configurations. The simulations show that the gate electrode and the circuit configuration have a strong influence on the response of broken down current mirrors. © 2007 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	2113-2116
Journal	Microelectronic Engineering
Volume	84
DOIs	https://doi.org/10.1016/j.mee.2007.04.093
Publication status	Published - 1 Sep 2007

Keywords

Dielectric breakdown
HfSiON
High-k dielectrics
Metal gate nMOSFET

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https://doi.org/10.1016/j.mee.2007.04.093

Cite this

@article{afaf815fa14b461b81d23d25e333fcce,

title = "Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performance",

abstract = "In this work, the electrical properties of stressed NMOSFETs with different gate electrodes (Polysilicon and TiN) and HfSiON gate dielectric have been compared. The results show that TiN gated devices are less sensitive to electrical stress. The SPICE parameters of degraded and broken-down devices have been extracted to simulate the impact of wear-out and dielectric breakdown in the response of different current mirror configurations. The simulations show that the gate electrode and the circuit configuration have a strong influence on the response of broken down current mirrors. {\textcopyright} 2007 Elsevier B.V. All rights reserved.",

keywords = "Dielectric breakdown, HfSiON, High-k dielectrics, Metal gate nMOSFET",

author = "L. Aguilera and J. Mart{\'i}n-Mart{\'i}nez and M. Porti and R. Rodr{\'i}guez and M. Cambrea and F. Crupi and M. Nafr{\'i}a and X. Aymerich",

year = "2007",

month = sep,

day = "1",

doi = "https://doi.org/10.1016/j.mee.2007.04.093",

language = "English",

volume = "84",

pages = "2113--2116",

journal = "Microelectronic Engineering",

issn = "0167-9317",

}

Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performance. / Aguilera, L.; Martín-Martínez, J.; Porti, M.; Rodríguez, R.; Cambrea, M.; Crupi, F.; Nafría, M.; Aymerich, X.

In: Microelectronic Engineering, Vol. 84, 01.09.2007, p. 2113-2116.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performance

AU - Aguilera, L.

AU - Martín-Martínez, J.

AU - Porti, M.

AU - Rodríguez, R.

AU - Cambrea, M.

AU - Crupi, F.

AU - Nafría, M.

AU - Aymerich, X.

PY - 2007/9/1

Y1 - 2007/9/1

N2 - In this work, the electrical properties of stressed NMOSFETs with different gate electrodes (Polysilicon and TiN) and HfSiON gate dielectric have been compared. The results show that TiN gated devices are less sensitive to electrical stress. The SPICE parameters of degraded and broken-down devices have been extracted to simulate the impact of wear-out and dielectric breakdown in the response of different current mirror configurations. The simulations show that the gate electrode and the circuit configuration have a strong influence on the response of broken down current mirrors. © 2007 Elsevier B.V. All rights reserved.

AB - In this work, the electrical properties of stressed NMOSFETs with different gate electrodes (Polysilicon and TiN) and HfSiON gate dielectric have been compared. The results show that TiN gated devices are less sensitive to electrical stress. The SPICE parameters of degraded and broken-down devices have been extracted to simulate the impact of wear-out and dielectric breakdown in the response of different current mirror configurations. The simulations show that the gate electrode and the circuit configuration have a strong influence on the response of broken down current mirrors. © 2007 Elsevier B.V. All rights reserved.

KW - Dielectric breakdown

KW - HfSiON

KW - High-k dielectrics

KW - Metal gate nMOSFET

U2 - https://doi.org/10.1016/j.mee.2007.04.093

DO - https://doi.org/10.1016/j.mee.2007.04.093

M3 - Article

VL - 84

SP - 2113

EP - 2116

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -

Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performance

Abstract

Keywords

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