Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performance

L. Aguilera, J. Martín-Martínez, M. Porti, R. Rodríguez, M. Cambrea, F. Crupi, M. Nafría, X. Aymerich

Research output: Contribution to journalArticleResearchpeer-review

Abstract

In this work, the electrical properties of stressed NMOSFETs with different gate electrodes (Polysilicon and TiN) and HfSiON gate dielectric have been compared. The results show that TiN gated devices are less sensitive to electrical stress. The SPICE parameters of degraded and broken-down devices have been extracted to simulate the impact of wear-out and dielectric breakdown in the response of different current mirror configurations. The simulations show that the gate electrode and the circuit configuration have a strong influence on the response of broken down current mirrors. © 2007 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)2113-2116
JournalMicroelectronic Engineering
Volume84
DOIs
Publication statusPublished - 1 Sep 2007

Keywords

  • Dielectric breakdown
  • HfSiON
  • High-k dielectrics
  • Metal gate nMOSFET

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