Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors

W. Polspoel, W. Vandervorst, L. Aguilera, M. Porti, M. Nafría, X. Aymerich

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	356-359
Journal	Journal of vacuum science & technology. B
Volume	27
Issue number	1
Publication status	Published - 1 Jan 2009

Cite this

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title = "Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors",

author = "W. Polspoel and W. Vandervorst and L. Aguilera and M. Porti and M. Nafr{\'i}a and X. Aymerich",

year = "2009",

month = jan,

day = "1",

language = "English",

volume = "27",

pages = "356--359",

journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",

issn = "0734-211X",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors

AU - Polspoel, W.

AU - Vandervorst, W.

AU - Aguilera, L.

AU - Porti, M.

AU - Nafría, M.

AU - Aymerich, X.

PY - 2009/1/1

Y1 - 2009/1/1

M3 - Article

VL - 27

SP - 356

EP - 359

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 0734-211X

IS - 1

ER -