Comparison of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs

C. Valdivieso; A. Crespo-Yepes; R. Miranda; D. Bernal; J. Martin-Martinez; R. Rodriguez; M. Nafria

doi:10.1016/j.sse.2022.108324

Comparison of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs

C. Valdivieso, A. Crespo-Yepes, R. Miranda, D. Bernal, J. Martin-Martinez, R. Rodriguez, M. Nafria

Universitat Autònoma de Barcelona (UAB)

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Abstract

In this work, the degradation of N-type FDSOI Ω-gate NW-FETs caused by OFF-State stress under different conditions has been experimentally studied and compared with the effects of positive/negative BTI and HCI aging. The experimental observations show that HCI and OFF-State are the most damaging aging mechanisms in these devices while N/PBTI produce negligible degradation. Moreover, for large enough stress conditions, OFF-State aging largely distorts the I_D-V_G curves of the transistor, leading to an almost linear dependence on V_G.

Original language	English
Article number	108324
Number of pages	4
Journal	SOLID-STATE ELECTRONICS
Volume	194
DOIs	https://doi.org/10.1016/j.sse.2022.108324
Publication status	Published - Aug 2022

Keywords

Aging
BTI
FD-SOI
HCI OFF-State
NW-FETs
Reliability
Stress

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10.1016/j.sse.2022.108324

https://ddd.uab.cat/record/283393

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title = "Comparison of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs",

abstract = "In this work, the degradation of N-type FDSOI Ω-gate NW-FETs caused by OFF-State stress under different conditions has been experimentally studied and compared with the effects of positive/negative BTI and HCI aging. The experimental observations show that HCI and OFF-State are the most damaging aging mechanisms in these devices while N/PBTI produce negligible degradation. Moreover, for large enough stress conditions, OFF-State aging largely distorts the ID-VG curves of the transistor, leading to an almost linear dependence on VG.",

keywords = "Aging, BTI, FD-SOI, HCI OFF-State, NW-FETs, Reliability, Stress",

author = "C. Valdivieso and A. Crespo-Yepes and R. Miranda and D. Bernal and J. Martin-Martinez and R. Rodriguez and M. Nafria",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

year = "2022",

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doi = "10.1016/j.sse.2022.108324",

language = "English",

volume = "194",

journal = "SOLID-STATE ELECTRONICS",

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TY - JOUR

T1 - Comparison of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs

AU - Valdivieso, C.

AU - Crespo-Yepes, A.

AU - Miranda, R.

AU - Bernal, D.

AU - Martin-Martinez, J.

AU - Rodriguez, R.

AU - Nafria, M.

PY - 2022/8

Y1 - 2022/8

N2 - In this work, the degradation of N-type FDSOI Ω-gate NW-FETs caused by OFF-State stress under different conditions has been experimentally studied and compared with the effects of positive/negative BTI and HCI aging. The experimental observations show that HCI and OFF-State are the most damaging aging mechanisms in these devices while N/PBTI produce negligible degradation. Moreover, for large enough stress conditions, OFF-State aging largely distorts the ID-VG curves of the transistor, leading to an almost linear dependence on VG.

AB - In this work, the degradation of N-type FDSOI Ω-gate NW-FETs caused by OFF-State stress under different conditions has been experimentally studied and compared with the effects of positive/negative BTI and HCI aging. The experimental observations show that HCI and OFF-State are the most damaging aging mechanisms in these devices while N/PBTI produce negligible degradation. Moreover, for large enough stress conditions, OFF-State aging largely distorts the ID-VG curves of the transistor, leading to an almost linear dependence on VG.

KW - Aging

KW - BTI

KW - FD-SOI

KW - HCI OFF-State

KW - NW-FETs

KW - Reliability

KW - Stress

UR - https://www.scopus.com/pages/publications/85129986859

U2 - 10.1016/j.sse.2022.108324

DO - 10.1016/j.sse.2022.108324

M3 - Article

AN - SCOPUS:85129986859

SN - 0038-1101

VL - 194

JO - SOLID-STATE ELECTRONICS

JF - SOLID-STATE ELECTRONICS

M1 - 108324

ER -

Comparison of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs

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Keywords

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