Comparison between the relaxation time approximation and the Boltzmann collision operator for simulation of dissipative electron transport in resonant tunnelling diodes

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    Abstract

    Carrier scattering in the Wigner formalism has been introduced for the simulation of dissipative electron transport in resonant tunnelling diodes. Two approaches have been considered: the relaxation time approximation and the Boltzmann collision operator. The relaxation time and transition rates have been evaluated and have been introduced in the discretized version of the Liouville equation to obtain the Wigner distribution function and the current density. Not only phonon scattering, but also ionized impurity scattering has been accounted for in both approaches. We have compared the two scattering models on the basis of the I-V characteristics which have been simulated under various temperature and doping conditions. The results clearly reveal a lower current peak in the Boltzmann collision operator approach. Since the results of both approaches are divergent and since no clear computation advantages are obtained from the relaxation time approximation, we prefer the use of the more realistic Boltzmann collision operator for the simulation of dissipative electron transport in resonant tunnelling diodes. Copyright © 1996 Elsevier Science Ltd.
    Original languageEnglish
    Pages (from-to)1795-1804
    JournalSolid-State Electronics
    Volume39
    DOIs
    Publication statusPublished - 1 Dec 1996

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