Compact Model for the Major and Minor Hysteretic I-V Loops in Nonlinear Memristive Devices

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Abstract

© 2015 IEEE. A compact model for the major and minor current-voltage (I-V) loops of bipolar resistive switching devices is reported. Following Chua's definition of memristive devices, the proposed approach comprises two equations: one for the electron transport across the device based on the generalized diode equation and a second one for the memory effect based on the Duhem differential equation. The model takes into account the creation and rupture of multiple conductive channels in terms of a voltage-driven logistic hysteron. Because of the identity property of the hysteresis operator used to solve the Duhem equation, the model is suitable for arbitrary input signals.
Original languageEnglish
Article number7154506
Pages (from-to)787-789
JournalIEEE Transactions on Nanotechnology
Volume14
Issue number5
DOIs
Publication statusPublished - 1 Sep 2015

Keywords

  • memristive
  • memristor
  • Resistive switching

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