Compact Model for Oxygen Engineered Yttrium Oxide-Based Resistive Switching Devices

This paper reports a material-oriented behavioural compact model for bipolar-type memristive devices. The model is written for the SPICE simulator and specifically deals with oxygen engineered yttrium oxide layers as the switching material. The model is able to represent not only the hysteretic I-V loop as many other memristor models do but, importantly, also its dependence on the oxygen content of the dielectric film. The starting point of our proposal is the dynamic memdiode model, which is modified appropriately so as to incorporate statistical information about the device electrical characteristics extracted from a large measurements database. In this way, the switching behaviour of the structures (low and high current states, set and reset voltages, etc.) as a function of the oxide stoichiometry can be tested before fabrication. A similar strategy can be applied to any other material-related fabrication parameter. Remarkably, this option opens up a new dimension for circuit designers.