Compact charge and capacitance modeling of undoped ultra-thin body (UTB) SOI MOSFETs

Oana Moldovan, Ferney A. Chaves, David Jiménez, Benjamin Iñiguez

Research output: Contribution to journalArticleResearchpeer-review

22 Citations (Scopus)


We present an analytic, explicit and continuous charge model for a long-channel UTB (ultra-thin body) SOI (silicon-on-insulator) MOSFET, from which analytical expressions of the total capacitances are obtained. Our model is valid from below to well above threshold, without suffering from discontinuities between the regimes. It is based on a unified charge control model derived from Poisson's equation. The drain-current, charge and capacitances expressions result in continuous explicit functions of the applied bias. The calculated capacitance characteristics are validated by 2D numerical simulations showing a very good agreement for different silicon film thicknesses. © 2008 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)1867-1871
JournalSolid-State Electronics
Publication statusPublished - 1 Dec 2008


  • Compact modeling
  • Double-gate MOSFET
  • Intrinsic capacitances


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