Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown

Shibing Long; Xiaojuan Lian; Carlo Cagli; Luca Perniola; Enrique Miranda; David Jimenez; Hangbing Lv; Qi Liu; Ling Li; Zongliang Huo; Ming Liu; Jordi Suñé

doi:10.1109/IRPS.2013.6532023

Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown

Shibing Long, Xiaojuan Lian, Carlo Cagli, Luca Perniola, Enrique Miranda, David Jimenez, Hangbing Lv, Qi Liu, Ling Li, Zongliang Huo, Ming Liu, Jordi Suñé

Department of Electronic Engineering

Research output: Chapter in Book › Chapter › Research › peer-review

12 Citations (Scopus)

Abstract

In this work, we depart from the cell-based percolation model of gate dielectric breakdown (BD) to propose analytical models for the SET and RESET statistics in resistive switching memory (RRAM). The SET or RESET statistics model consists of two basic elements: (i) a cell-based geometrical model to describe the dependence of the resistive switching (RS) distribution on the defect generation in the conductive filament (CF), and (ii) a deterministic model for the SET/RESET dynamics to describe the relation of the defect generation with measurable variables such as the SET/RESET voltage and current. The experimental observations in HfO₂- and NiO-based RRAM devices can be successfully accounted for by our models for RS statistics. The models set a framework for the consideration of performance-reliability tradeoffs in RRAM.

Original language	English
Title of host publication	2013 IEEE International Reliability Physics Symposium (IRPS)
Pages	5A.6.1-5A.6.8
Number of pages	8
ISBN (Electronic)	978-1-4799-0113-5, 978-1-4799-0111-1
DOIs	https://doi.org/10.1109/IRPS.2013.6532023
Publication status	Published - 2013

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Keywords

cell-based model
conductive filament
defect generation
dielectric breakdown
RESET
resistive switching
retention
RRAM
SET
statistics
thermal dissolution model
variability

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10.1109/IRPS.2013.6532023

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Long, S., Lian, X., Cagli, C., Perniola, L., Miranda, E., Jimenez, D., Lv, H., Liu, Q., Li, L., Huo, Z., Liu, M., & Suñé, J. (2013). Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown. In 2013 IEEE International Reliability Physics Symposium (IRPS) (pp. 5A.6.1-5A.6.8). (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2013.6532023

@inbook{8cf82fe47d0a47c1a877b12a6215ad42,

title = "Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown",

abstract = "In this work, we depart from the cell-based percolation model of gate dielectric breakdown (BD) to propose analytical models for the SET and RESET statistics in resistive switching memory (RRAM). The SET or RESET statistics model consists of two basic elements: (i) a cell-based geometrical model to describe the dependence of the resistive switching (RS) distribution on the defect generation in the conductive filament (CF), and (ii) a deterministic model for the SET/RESET dynamics to describe the relation of the defect generation with measurable variables such as the SET/RESET voltage and current. The experimental observations in HfO2- and NiO-based RRAM devices can be successfully accounted for by our models for RS statistics. The models set a framework for the consideration of performance-reliability tradeoffs in RRAM.",

keywords = "cell-based model, conductive filament, defect generation, dielectric breakdown, RESET, resistive switching, retention, RRAM, SET, statistics, thermal dissolution model, variability",

author = "Shibing Long and Xiaojuan Lian and Carlo Cagli and Luca Perniola and Enrique Miranda and David Jimenez and Hangbing Lv and Qi Liu and Ling Li and Zongliang Huo and Ming Liu and Jordi Su{\~n}{\'e}",

year = "2013",

doi = "10.1109/IRPS.2013.6532023",

language = "English",

isbn = "978-1-4799-0112-8",

series = "IEEE International Reliability Physics Symposium Proceedings",

pages = "5A.6.1--5A.6.8",

booktitle = "2013 IEEE International Reliability Physics Symposium (IRPS)",

}

Long, S, Lian, X, Cagli, C, Perniola, L, Miranda, E , Jimenez, D, Lv, H, Liu, Q, Li, L, Huo, Z, Liu, M & Suñé, J 2013, Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown. in 2013 IEEE International Reliability Physics Symposium (IRPS). IEEE International Reliability Physics Symposium Proceedings, pp. 5A.6.1-5A.6.8. https://doi.org/10.1109/IRPS.2013.6532023

Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown. / Long, Shibing; Lian, Xiaojuan; Cagli, Carlo et al.
2013 IEEE International Reliability Physics Symposium (IRPS). 2013. p. 5A.6.1-5A.6.8 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book › Chapter › Research › peer-review

TY - CHAP

T1 - Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown

AU - Long, Shibing

AU - Lian, Xiaojuan

AU - Cagli, Carlo

AU - Perniola, Luca

AU - Miranda, Enrique

AU - Jimenez, David

AU - Lv, Hangbing

AU - Liu, Qi

AU - Li, Ling

AU - Huo, Zongliang

AU - Liu, Ming

AU - Suñé, Jordi

PY - 2013

Y1 - 2013

N2 - In this work, we depart from the cell-based percolation model of gate dielectric breakdown (BD) to propose analytical models for the SET and RESET statistics in resistive switching memory (RRAM). The SET or RESET statistics model consists of two basic elements: (i) a cell-based geometrical model to describe the dependence of the resistive switching (RS) distribution on the defect generation in the conductive filament (CF), and (ii) a deterministic model for the SET/RESET dynamics to describe the relation of the defect generation with measurable variables such as the SET/RESET voltage and current. The experimental observations in HfO2- and NiO-based RRAM devices can be successfully accounted for by our models for RS statistics. The models set a framework for the consideration of performance-reliability tradeoffs in RRAM.

AB - In this work, we depart from the cell-based percolation model of gate dielectric breakdown (BD) to propose analytical models for the SET and RESET statistics in resistive switching memory (RRAM). The SET or RESET statistics model consists of two basic elements: (i) a cell-based geometrical model to describe the dependence of the resistive switching (RS) distribution on the defect generation in the conductive filament (CF), and (ii) a deterministic model for the SET/RESET dynamics to describe the relation of the defect generation with measurable variables such as the SET/RESET voltage and current. The experimental observations in HfO2- and NiO-based RRAM devices can be successfully accounted for by our models for RS statistics. The models set a framework for the consideration of performance-reliability tradeoffs in RRAM.

KW - cell-based model

KW - conductive filament

KW - defect generation

KW - dielectric breakdown

KW - RESET

KW - resistive switching

KW - retention

KW - RRAM

KW - SET

KW - statistics

KW - thermal dissolution model

KW - variability

UR - http://www.scopus.com/inward/record.url?scp=84881008486&partnerID=8YFLogxK

U2 - 10.1109/IRPS.2013.6532023

DO - 10.1109/IRPS.2013.6532023

M3 - Chapter

AN - SCOPUS:84881008486

SN - 978-1-4799-0112-8

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 5A.6.1-5A.6.8

BT - 2013 IEEE International Reliability Physics Symposium (IRPS)

ER -

Long S, Lian X, Cagli C, Perniola L, Miranda E , Jimenez D et al. Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown. In 2013 IEEE International Reliability Physics Symposium (IRPS). 2013. p. 5A.6.1-5A.6.8. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2013.6532023

Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown

Abstract

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Keywords

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DISPOSITIVOS IONICO-ELECTRONICOS BASADOS EN OXIDOS PARA MEMORIAS NO VOLATILES Y NANOELECTRONICA RECONFIGURABLE

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Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown

Abstract

Publication series

Keywords

Access to Document

Other files and links

Fingerprint

Projects

DISPOSITIVOS IONICO-ELECTRONICOS BASADOS EN OXIDOS PARA MEMORIAS NO VOLATILES Y NANOELECTRONICA RECONFIGURABLE

Cite this