Common framework for soft and hard breakdown in ultrathin oxides based on the theory of point contact conduction

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Abstract

The soft and hard breakdown (SBD/HBD) conduction modes in ultrathin gate oxides based on the physics of mesoscopic conductors are investigated. It i shown that the Landauer approach applied to this system not only gives the observed HBD conductance values, which are those exposed for a ballistic constriction in the linear and nonlinear regimes, but also a plausible mechanism for the SBD conduction.
Original languageEnglish
Pages (from-to)171-174
JournalMicroelectronic Engineering
Volume48
Issue number1
DOIs
Publication statusPublished - 1 Jan 1999

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