Epitaxial films of ferromagnetic CoFe2O4 (CFO) were grown by pulsed laser deposition on Si(001) buffered with ultrathin yttria-stabilized zirconia (YSZ) layers in a single process. Reflection high-energy electron diffraction was used to monitor in real time the crystallization of YSZ, allowing the fabrication of epitaxial YSZ buffers with thickness of about 2 nm. CFO films, with thicknesses in the 2-50 nm range were subsequently deposited. The magnetization of the CFO films is close to the bulk value. The ultrathin CFO/YSZ heterostructures have very flat morphology (0.1 nm roughness) and thin interfacial SiOx layer (about 2 nm thick) making them suitable for integration in tunnel (e.g., spin injection) devices. © 2011 American Institute of Physics.
|Journal||Journal of Applied Physics|
|Publication status||Published - 15 Oct 2011|