Co-designed high-efficiency GaN filter power amplifier

Jose Antonio Estrada; Pedro De Paco; Seth Johannes; Dimitra Psychogiou; Zoya Popovic

doi:10.1109/IMS30576.2020.9223993

Co-designed high-efficiency GaN filter power amplifier

Jose Antonio Estrada^*, Pedro De Paco, Seth Johannes, Dimitra Psychogiou, Zoya Popovic

^*Corresponding author for this work

Department of Telecommunications and Systems Engineering

University of Colorado Boulder (UCB)

Research output: Contribution to journal › Article › Research › peer-review

2 Citations (Scopus)

Abstract

In this paper, we demonstrate a high-efficiency 4.7 GHz 4-W power amplifier with input and output matching networks designed as complex-impedance port filters, within a sub-6 GHz 5G band. The port impedances are determined by the load- and source-pull of a GaN HEMT for an efficiency-power tradeoff. The measured performance shows PAE=55% over a 9% fractional bandwidth, with 10 dB rejection at 4.5 and 5 GHz. Comparison with a cascaded PA-filter circuit shows 25% lower loss with a simultaneous 20% reduction in footprint.

Original language	American English
Pages (from-to)	115-118
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
DOIs	https://doi.org/10.1109/IMS30576.2020.9223993
Publication status	Published - Aug 2020
Event	2020 IEEE/MTT-S International Microwave Symposium (IMS) - Virtual, Los Angeles, United States Duration: 4 Aug 2020 → 6 Aug 2020

Keywords

5G
Ceramic
Coaxial resonators
GaN
Power amplifiers
RF filters

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10.1109/IMS30576.2020.9223993

Cite this

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title = "Co-designed high-efficiency GaN filter power amplifier",

abstract = "In this paper, we demonstrate a high-efficiency 4.7 GHz 4-W power amplifier with input and output matching networks designed as complex-impedance port filters, within a sub-6 GHz 5G band. The port impedances are determined by the load- and source-pull of a GaN HEMT for an efficiency-power tradeoff. The measured performance shows PAE=55\% over a 9\% fractional bandwidth, with 10 dB rejection at 4.5 and 5 GHz. Comparison with a cascaded PA-filter circuit shows 25\% lower loss with a simultaneous 20\% reduction in footprint. ",

keywords = "5G, Ceramic, Coaxial resonators, GaN, Power amplifiers, RF filters",

author = "Estrada, \{Jose Antonio\} and \{De Paco\}, Pedro and Seth Johannes and Dimitra Psychogiou and Zoya Popovic",

year = "2020",

month = aug,

doi = "10.1109/IMS30576.2020.9223993",

language = "Ingl{\'e}s estadounidense",

pages = "115--118",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2020 IEEE/MTT-S International Microwave Symposium (IMS) ; Conference date: 04-08-2020 Through 06-08-2020",

}

TY - JOUR

T1 - Co-designed high-efficiency GaN filter power amplifier

AU - Estrada, Jose Antonio

AU - De Paco, Pedro

AU - Johannes, Seth

AU - Psychogiou, Dimitra

AU - Popovic, Zoya

PY - 2020/8

Y1 - 2020/8

N2 - In this paper, we demonstrate a high-efficiency 4.7 GHz 4-W power amplifier with input and output matching networks designed as complex-impedance port filters, within a sub-6 GHz 5G band. The port impedances are determined by the load- and source-pull of a GaN HEMT for an efficiency-power tradeoff. The measured performance shows PAE=55% over a 9% fractional bandwidth, with 10 dB rejection at 4.5 and 5 GHz. Comparison with a cascaded PA-filter circuit shows 25% lower loss with a simultaneous 20% reduction in footprint.

AB - In this paper, we demonstrate a high-efficiency 4.7 GHz 4-W power amplifier with input and output matching networks designed as complex-impedance port filters, within a sub-6 GHz 5G band. The port impedances are determined by the load- and source-pull of a GaN HEMT for an efficiency-power tradeoff. The measured performance shows PAE=55% over a 9% fractional bandwidth, with 10 dB rejection at 4.5 and 5 GHz. Comparison with a cascaded PA-filter circuit shows 25% lower loss with a simultaneous 20% reduction in footprint.

KW - 5G

KW - Ceramic

KW - Coaxial resonators

KW - GaN

KW - Power amplifiers

KW - RF filters

UR - https://www.scopus.com/pages/publications/85094186286

U2 - 10.1109/IMS30576.2020.9223993

DO - 10.1109/IMS30576.2020.9223993

M3 - Artículo

AN - SCOPUS:85094186286

SN - 0149-645X

SP - 115

EP - 118

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 2020 IEEE/MTT-S International Microwave Symposium (IMS)

Y2 - 4 August 2020 through 6 August 2020

ER -

Co-designed high-efficiency GaN filter power amplifier

Abstract

Keywords

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