CMOS-SOI platform for monolithic integration of crystalline silicon MEMS

M. Villarroya; E. Figueras; J. Verd; J. Teva; G. Abadal; F. Pérez-Murano; J. Montserrat; A. Uranga; J. Esteve; N. Barniol

doi:10.1049/el:20061097

CMOS-SOI platform for monolithic integration of crystalline silicon MEMS

M. Villarroya, E. Figueras, J. Verd, J. Teva, G. Abadal, F. Pérez-Murano, J. Montserrat, A. Uranga, J. Esteve, N. Barniol

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

1 Citation (Scopus)

Abstract

A new platform for the fabrication of crystalline micro- and nano-electromechanical systems fully integrable with CMOS is presented. A pre-CMOS process on SOI wafers allows bulk silicon areas for standard CMOS processing and areas with a stack layer of silicon and silicon oxide to be obtained, in which a set of microelectromechanical devices can be fabricated. An integrated resonant beam system with electrical actuation and detection fabricated according to the presented approach is provided.

Original language	English
Pages (from-to)	800-801
Number of pages	2
Journal	Electronics Letters
Volume	42
Issue number	14
DOIs	https://doi.org/10.1049/el:20061097
Publication status	Published - 6 Jul 2006

Access to Document

10.1049/el:20061097

Cite this

@article{f1c6cd9b54174cacaa00a40ee3831a04,

title = "CMOS-SOI platform for monolithic integration of crystalline silicon MEMS",

abstract = "A new platform for the fabrication of crystalline micro- and nano-electromechanical systems fully integrable with CMOS is presented. A pre-CMOS process on SOI wafers allows bulk silicon areas for standard CMOS processing and areas with a stack layer of silicon and silicon oxide to be obtained, in which a set of microelectromechanical devices can be fabricated. An integrated resonant beam system with electrical actuation and detection fabricated according to the presented approach is provided.",

author = "M. Villarroya and E. Figueras and J. Verd and J. Teva and G. Abadal and F. P{\'e}rez-Murano and J. Montserrat and A. Uranga and J. Esteve and N. Barniol",

year = "2006",

month = jul,

day = "6",

doi = "10.1049/el:20061097",

language = "English",

volume = "42",

pages = "800--801",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "14",

}

TY - JOUR

T1 - CMOS-SOI platform for monolithic integration of crystalline silicon MEMS

AU - Villarroya, M.

AU - Figueras, E.

AU - Verd, J.

AU - Teva, J.

AU - Abadal, G.

AU - Pérez-Murano, F.

AU - Montserrat, J.

AU - Uranga, A.

AU - Esteve, J.

AU - Barniol, N.

PY - 2006/7/6

Y1 - 2006/7/6

N2 - A new platform for the fabrication of crystalline micro- and nano-electromechanical systems fully integrable with CMOS is presented. A pre-CMOS process on SOI wafers allows bulk silicon areas for standard CMOS processing and areas with a stack layer of silicon and silicon oxide to be obtained, in which a set of microelectromechanical devices can be fabricated. An integrated resonant beam system with electrical actuation and detection fabricated according to the presented approach is provided.

AB - A new platform for the fabrication of crystalline micro- and nano-electromechanical systems fully integrable with CMOS is presented. A pre-CMOS process on SOI wafers allows bulk silicon areas for standard CMOS processing and areas with a stack layer of silicon and silicon oxide to be obtained, in which a set of microelectromechanical devices can be fabricated. An integrated resonant beam system with electrical actuation and detection fabricated according to the presented approach is provided.

UR - https://www.scopus.com/pages/publications/33745780343

U2 - 10.1049/el:20061097

DO - 10.1049/el:20061097

M3 - Article

SN - 0013-5194

VL - 42

SP - 800

EP - 801

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

CMOS-SOI platform for monolithic integration of crystalline silicon MEMS

Abstract

Access to Document

Other files and links

Fingerprint

Cite this