CMOS-MEMS switches based on back-end metal layers

J. L. Muñoz-Gamarra; G. Vidal-Álvarez; F. Torres; A. Uranga; N. Barniol

doi:https://doi.org/10.1016/j.mee.2014.03.036

CMOS-MEMS switches based on back-end metal layers

J. L. Muñoz-Gamarra, G. Vidal-Álvarez, F. Torres, A. Uranga, N. Barniol

Research output: Contribution to journal › Article › Research › peer-review

11 Citations (Scopus)

Abstract

In this work MEMS switches have been developed using a standard CMOS technology (AMS 0.35 μm technology). With this purpose the back-end metallization layers (based on aluminum) have been used in two different configurations: stack of metals and via layers or M4 upper metal layer. After the in-house post-processing based on wet etching releasing process, they have been characterized and electrically measured, showing good reliability (more than 20 cycles, in both approaches) abrupt behavior (24 mV/decade M4 configuration and 5 mV/decade stack approach) and good ION/I OFF ratio (1x102 M4 configuration and 1x103 stack switch). © 2014 Published by Elsevier B.V.

Original language	English
Pages (from-to)	127-130
Journal	Microelectronic Engineering
Volume	119
DOIs	https://doi.org/10.1016/j.mee.2014.03.036
Publication status	Published - 1 May 2014

Keywords

CMOS-MEMS switch
Metal MEMS switch
Stack configuration

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title = "CMOS-MEMS switches based on back-end metal layers",

abstract = "In this work MEMS switches have been developed using a standard CMOS technology (AMS 0.35 μm technology). With this purpose the back-end metallization layers (based on aluminum) have been used in two different configurations: stack of metals and via layers or M4 upper metal layer. After the in-house post-processing based on wet etching releasing process, they have been characterized and electrically measured, showing good reliability (more than 20 cycles, in both approaches) abrupt behavior (24 mV/decade M4 configuration and 5 mV/decade stack approach) and good ION/I OFF ratio (1x102 M4 configuration and 1x103 stack switch). {\textcopyright} 2014 Published by Elsevier B.V.",

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T1 - CMOS-MEMS switches based on back-end metal layers

AU - Muñoz-Gamarra, J. L.

AU - Vidal-Álvarez, G.

AU - Torres, F.

AU - Uranga, A.

AU - Barniol, N.

PY - 2014/5/1

Y1 - 2014/5/1

N2 - In this work MEMS switches have been developed using a standard CMOS technology (AMS 0.35 μm technology). With this purpose the back-end metallization layers (based on aluminum) have been used in two different configurations: stack of metals and via layers or M4 upper metal layer. After the in-house post-processing based on wet etching releasing process, they have been characterized and electrically measured, showing good reliability (more than 20 cycles, in both approaches) abrupt behavior (24 mV/decade M4 configuration and 5 mV/decade stack approach) and good ION/I OFF ratio (1x102 M4 configuration and 1x103 stack switch). © 2014 Published by Elsevier B.V.

AB - In this work MEMS switches have been developed using a standard CMOS technology (AMS 0.35 μm technology). With this purpose the back-end metallization layers (based on aluminum) have been used in two different configurations: stack of metals and via layers or M4 upper metal layer. After the in-house post-processing based on wet etching releasing process, they have been characterized and electrically measured, showing good reliability (more than 20 cycles, in both approaches) abrupt behavior (24 mV/decade M4 configuration and 5 mV/decade stack approach) and good ION/I OFF ratio (1x102 M4 configuration and 1x103 stack switch). © 2014 Published by Elsevier B.V.

KW - CMOS-MEMS switch

KW - Metal MEMS switch

KW - Stack configuration

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M3 - Article

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SP - 127

EP - 130

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -

CMOS-MEMS switches based on back-end metal layers

Abstract

Keywords

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