In this work MEMS switches have been developed using a standard CMOS technology (AMS 0.35 μm technology). With this purpose the back-end metallization layers (based on aluminum) have been used in two different configurations: stack of metals and via layers or M4 upper metal layer. After the in-house post-processing based on wet etching releasing process, they have been characterized and electrically measured, showing good reliability (more than 20 cycles, in both approaches) abrupt behavior (24 mV/decade M4 configuration and 5 mV/decade stack approach) and good ION/I OFF ratio (1x102 M4 configuration and 1x103 stack switch). © 2014 Published by Elsevier B.V.
|Publication status||Published - 1 May 2014|
- CMOS-MEMS switch
- Metal MEMS switch
- Stack configuration