CMOS-MEMS switches based on back-end metal layers

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7 Citations (Scopus)

Abstract

In this work MEMS switches have been developed using a standard CMOS technology (AMS 0.35 μm technology). With this purpose the back-end metallization layers (based on aluminum) have been used in two different configurations: stack of metals and via layers or M4 upper metal layer. After the in-house post-processing based on wet etching releasing process, they have been characterized and electrically measured, showing good reliability (more than 20 cycles, in both approaches) abrupt behavior (24 mV/decade M4 configuration and 5 mV/decade stack approach) and good ION/I OFF ratio (1x102 M4 configuration and 1x103 stack switch). © 2014 Published by Elsevier B.V.
Original languageEnglish
Pages (from-to)127-130
JournalMicroelectronic Engineering
Volume119
DOIs
Publication statusPublished - 1 May 2014

Keywords

  • CMOS-MEMS switch
  • Metal MEMS switch
  • Stack configuration

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