Circuit reliability prediction: Challenges and solutions for the device time-dependent variability characterization roadblock

M. Nafria, J. Diaz-Fortuny, P. Saraza-Canflanca, J. Martin-Martinez, E. Roca, R. Castro-Lopez, R. Rodriguez, P. Martin-Lloret, A. Toro-Frias, D. Mateo, E. Barajas, X. Aragones, F. V. Fernandez

Research output: Contribution to journalArticleResearchpeer-review

Abstract

The characterization of the MOSFET Time-Dependent Variability (TDV) can be a showstopper for reliability-Aware circuit design in advanced CMOS nodes. In this work, a complete MOSFET characterization flow is presented, in the context of a physics-based TDV compact model, that addresses the main TDV characterization challenges for accurate circuit reliability prediction at design time. The pillars of this approach are described and illustrated through examples.

Original languageEnglish
JournalLAEDC 2021 - IEEE Latin America Electron Devices Conference
DOIs
Publication statusPublished - 19 Apr 2021

Keywords

  • aging
  • BTI
  • characterization
  • CMOS technology
  • HCI degradation
  • MOSFET
  • RTN
  • Time-dependent variability

Fingerprint

Dive into the research topics of 'Circuit reliability prediction: Challenges and solutions for the device time-dependent variability characterization roadblock'. Together they form a unique fingerprint.

Cite this