The characterization of the MOSFET Time-Dependent Variability (TDV) can be a showstopper for reliability-Aware circuit design in advanced CMOS nodes. In this work, a complete MOSFET characterization flow is presented, in the context of a physics-based TDV compact model, that addresses the main TDV characterization challenges for accurate circuit reliability prediction at design time. The pillars of this approach are described and illustrated through examples.
|Journal||LAEDC 2021 - IEEE Latin America Electron Devices Conference|
|Publication status||Published - 19 Apr 2021|
- CMOS technology
- HCI degradation
- Time-dependent variability