In this letter, a prototype of conductive atomic force microscope with enhanced electrical performance has been used to separately investigate the effect of the electrical stress on the SiO2 and the HfO2 layers of a high- κ gate stack. Charge trapping in HfO2 native defects and degradation of both layers have been observed, depending on the stress level. © 2006 IEEE.
- Atomic force microscopy (AFM)
- Dielectric breakdown
- HfO 2
- High-κ dielectric
- MOS device