Charge trapping and degradation of HfO<inf>2</inf> SiO<inf>2</inf> MOS gate stacks observed with enhanced cafm

Lidia Aguilera, M. Porti, M. Nafría, X. Aymerich

Research output: Contribution to journalArticleResearchpeer-review

23 Citations (Scopus)

Abstract

In this letter, a prototype of conductive atomic force microscope with enhanced electrical performance has been used to separately investigate the effect of the electrical stress on the SiO2 and the HfO2 layers of a high- κ gate stack. Charge trapping in HfO2 native defects and degradation of both layers have been observed, depending on the stress level. © 2006 IEEE.
Original languageEnglish
Pages (from-to)157-159
JournalIEEE Electron Device Letters
Volume27
DOIs
Publication statusPublished - 1 Mar 2006

Keywords

  • Atomic force microscopy (AFM)
  • Dielectric breakdown
  • HfO 2
  • High-κ dielectric
  • MOS device

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