Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

J. Anders; M. Benoit; S. Braccini; R. Casanova; H. Chen; K. Chen; F. A.Di Bello; A. Fehr; D. Ferrere; D. Forshaw; T. Golling; S. Gonzalez-Sevilla; G. Iacobucci; M. Kiehn; F. Lanni; H. Liu; L. Meng; C. Merlassino; A. Miucci; M. Nessi; I. Perić; M. Rimoldi; D. M.S. Sultan; M. Vicente Barreto Pinto; E. Vilella; M. Weber; T. Weston; W. Wu; L. Xu; E. Zaffaroni

doi:10.1088/1748-0221/13/10/P10004

Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

J. Anders, M. Benoit, S. Braccini, R. Casanova, H. Chen, K. Chen, F. A.Di Bello, A. Fehr, D. Ferrere, D. Forshaw, T. Golling, S. Gonzalez-Sevilla, G. Iacobucci, M. Kiehn, F. Lanni, H. Liu, L. Meng, C. Merlassino, A. Miucci, M. NessiI. Perić, M. Rimoldi, D. M.S. Sultan, M. Vicente Barreto Pinto, E. Vilella, M. Weber, T. Weston, W. Wu, L. Xu, E. Zaffaroni

Research output: Contribution to journal › Article › Research

4 Citations (Scopus)

Abstract

© 2018 CERN. This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.

Original language	English
Article number	P10004
Journal	Journal of Instrumentation
Volume	13
DOIs	https://doi.org/10.1088/1748-0221/13/10/P10004
Publication status	Published - 1 Oct 2018

Keywords

Particle tracking detectors (Solid-state detectors)
Radiation-hard detectors
Solid state detectors

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Anders, J., Benoit, M., Braccini, S., Casanova, R., Chen, H., Chen, K., Bello, F. A. D., Fehr, A., Ferrere, D., Forshaw, D., Golling, T., Gonzalez-Sevilla, S., Iacobucci, G., Kiehn, M., Lanni, F., Liu, H., Meng, L., Merlassino, C., Miucci, A., ... Zaffaroni, E. (2018). Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation. Journal of Instrumentation, 13, [P10004]. https://doi.org/10.1088/1748-0221/13/10/P10004

Anders, J. ; Benoit, M. ; Braccini, S. ; Casanova, R. ; Chen, H. ; Chen, K. ; Bello, F. A.Di ; Fehr, A. ; Ferrere, D. ; Forshaw, D. ; Golling, T. ; Gonzalez-Sevilla, S. ; Iacobucci, G. ; Kiehn, M. ; Lanni, F. ; Liu, H. ; Meng, L. ; Merlassino, C. ; Miucci, A. ; Nessi, M. ; Perić, I. ; Rimoldi, M. ; Sultan, D. M.S. ; Pinto, M. Vicente Barreto ; Vilella, E. ; Weber, M. ; Weston, T. ; Wu, W. ; Xu, L. ; Zaffaroni, E. / Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation. In: Journal of Instrumentation. 2018 ; Vol. 13.

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title = "Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation",

abstract = "{\textcopyright} 2018 CERN. This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.",

keywords = "Particle tracking detectors (Solid-state detectors), Radiation-hard detectors, Solid state detectors",

author = "J. Anders and M. Benoit and S. Braccini and R. Casanova and H. Chen and K. Chen and Bello, {F. A.Di} and A. Fehr and D. Ferrere and D. Forshaw and T. Golling and S. Gonzalez-Sevilla and G. Iacobucci and M. Kiehn and F. Lanni and H. Liu and L. Meng and C. Merlassino and A. Miucci and M. Nessi and I. Peri{\'c} and M. Rimoldi and Sultan, {D. M.S.} and Pinto, {M. Vicente Barreto} and E. Vilella and M. Weber and T. Weston and W. Wu and L. Xu and E. Zaffaroni",

year = "2018",

month = oct,

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doi = "10.1088/1748-0221/13/10/P10004",

language = "English",

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journal = "Journal of Instrumentation",

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Anders, J, Benoit, M, Braccini, S, Casanova, R, Chen, H, Chen, K, Bello, FAD, Fehr, A, Ferrere, D, Forshaw, D, Golling, T, Gonzalez-Sevilla, S, Iacobucci, G, Kiehn, M, Lanni, F, Liu, H, Meng, L, Merlassino, C, Miucci, A, Nessi, M, Perić, I, Rimoldi, M, Sultan, DMS, Pinto, MVB, Vilella, E, Weber, M, Weston, T, Wu, W, Xu, L & Zaffaroni, E 2018, 'Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation', Journal of Instrumentation, vol. 13, P10004. https://doi.org/10.1088/1748-0221/13/10/P10004

Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation. / Anders, J.; Benoit, M.; Braccini, S.; Casanova, R.; Chen, H.; Chen, K.; Bello, F. A.Di; Fehr, A.; Ferrere, D.; Forshaw, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Meng, L.; Merlassino, C.; Miucci, A.; Nessi, M.; Perić, I.; Rimoldi, M.; Sultan, D. M.S.; Pinto, M. Vicente Barreto; Vilella, E.; Weber, M.; Weston, T.; Wu, W.; Xu, L.; Zaffaroni, E.

In: Journal of Instrumentation, Vol. 13, P10004, 01.10.2018.

Research output: Contribution to journal › Article › Research

TY - JOUR

T1 - Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

AU - Anders, J.

AU - Benoit, M.

AU - Braccini, S.

AU - Casanova, R.

AU - Chen, H.

AU - Chen, K.

AU - Bello, F. A.Di

AU - Fehr, A.

AU - Ferrere, D.

AU - Forshaw, D.

AU - Golling, T.

AU - Gonzalez-Sevilla, S.

AU - Iacobucci, G.

AU - Kiehn, M.

AU - Lanni, F.

AU - Liu, H.

AU - Meng, L.

AU - Merlassino, C.

AU - Miucci, A.

AU - Nessi, M.

AU - Perić, I.

AU - Rimoldi, M.

AU - Sultan, D. M.S.

AU - Pinto, M. Vicente Barreto

AU - Vilella, E.

AU - Weber, M.

AU - Weston, T.

AU - Wu, W.

AU - Xu, L.

AU - Zaffaroni, E.

PY - 2018/10/1

Y1 - 2018/10/1

N2 - © 2018 CERN. This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.

AB - © 2018 CERN. This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.

KW - Particle tracking detectors (Solid-state detectors)

KW - Radiation-hard detectors

KW - Solid state detectors

U2 - 10.1088/1748-0221/13/10/P10004

DO - 10.1088/1748-0221/13/10/P10004

M3 - Article

VL - 13

JO - Journal of Instrumentation

JF - Journal of Instrumentation

SN - 1748-0221

M1 - P10004

ER -