Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

J. Anders, M. Benoit, S. Braccini, R. Casanova, H. Chen, K. Chen, F. A.Di Bello, A. Fehr, D. Ferrere, D. Forshaw, T. Golling, S. Gonzalez-Sevilla, G. Iacobucci, M. Kiehn, F. Lanni, H. Liu, L. Meng, C. Merlassino, A. Miucci, M. NessiI. Perić, M. Rimoldi, D. M.S. Sultan, M. Vicente Barreto Pinto, E. Vilella, M. Weber, T. Weston, W. Wu, L. Xu, E. Zaffaroni

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4 Citations (Scopus)

Abstract

© 2018 CERN. This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.
Original languageEnglish
Article numberP10004
JournalJournal of Instrumentation
Volume13
DOIs
Publication statusPublished - 1 Oct 2018

Keywords

  • Particle tracking detectors (Solid-state detectors)
  • Radiation-hard detectors
  • Solid state detectors

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