Abstract
© 2018 CERN. This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.
Original language | English |
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Article number | P10004 |
Journal | Journal of Instrumentation |
Volume | 13 |
DOIs | |
Publication status | Published - 1 Oct 2018 |
Keywords
- Particle tracking detectors (Solid-state detectors)
- Radiation-hard detectors
- Solid state detectors