Already published experimental data on electron tunneling through MOS structures show that the well-known Fowler-Nordheim plot presents a current enhancement in the low-field region. After discussing the physical phenomena that could affect the Fowler-Nordheim current dependence on the oxide field we obtain that the roughness of the metal-SiO2-Si interface is the most information about the oxide roughness from the experimentally obtained F-N plot. © 1987 Elsevier Science Publishers B.V. (North-Holland Physics Publishing Division).
Suñé, J., Placencia, Y., Campabadal, F., & Aymerich, X. (1987). Characterization of the metal-SiO<inf>2</inf>-Si interface roughness by electrical methods. Surface Science, 189-190, 346-352. https://doi.org/10.1016/S0039-6028(87)80452-1