Characterization of the metal-SiO<inf>2</inf>-Si interface roughness by electrical methods

J. Suñé, Y. Placencia, F. Campabadal, X. Aymerich

    Research output: Contribution to journalArticleResearchpeer-review

    11 Citations (Scopus)

    Abstract

    Already published experimental data on electron tunneling through MOS structures show that the well-known Fowler-Nordheim plot presents a current enhancement in the low-field region. After discussing the physical phenomena that could affect the Fowler-Nordheim current dependence on the oxide field we obtain that the roughness of the metal-SiO2-Si interface is the most information about the oxide roughness from the experimentally obtained F-N plot. © 1987 Elsevier Science Publishers B.V. (North-Holland Physics Publishing Division).
    Original languageEnglish
    Pages (from-to)346-352
    JournalSurface Science
    Volume189-190
    DOIs
    Publication statusPublished - 2 Oct 1987

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