Characterization of the Electrical Damage due to Polysilicon RIE(SF<inf>6</inf>+ CL<inf>2</inf>Plasma) Etching

E. Castán; A. De Dios; L. Bailón; J. Barbolla; E. Cabruja; C. Domínquez; E. Lora-Tamayo

doi:10.1149/1.2069168

Characterization of the Electrical Damage due to Polysilicon RIE(SF<inf>6</inf>+ CL<inf>2</inf>Plasma) Etching

E. Castán, A. De Dios, L. Bailón, J. Barbolla, E. Cabruja, C. Domínquez, E. Lora-Tamayo

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

3 Citations (Scopus)

Abstract

The electrically active damage generated by a polysilicon RIE (SF6+ Cl2plasma) etching process has been characterized in polysilicon deposited on a 500 Å thick gate oxide by the C-V and DLTS techniques. The study was carried out by measuring the charge density in the oxide and the interface state density in metal oxide semiconductor capacitors for extreme values of the controllable RIE parameters. From the results obtained we conclude that this system does not generate any appreciable damage. © 1991, The Electrochemical Society, Inc. All rights reserved.

Original language	English
Pages (from-to)	193-195
Journal	Journal of the Electrochemical Society
Volume	139
Issue number	1
DOIs	https://doi.org/10.1149/1.2069168
Publication status	Published - 1 Jan 1992

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title = "Characterization of the Electrical Damage due to Polysilicon RIE(SF6+ CL2Plasma) Etching",

abstract = "The electrically active damage generated by a polysilicon RIE (SF6+ Cl2plasma) etching process has been characterized in polysilicon deposited on a 500 {\AA} thick gate oxide by the C-V and DLTS techniques. The study was carried out by measuring the charge density in the oxide and the interface state density in metal oxide semiconductor capacitors for extreme values of the controllable RIE parameters. From the results obtained we conclude that this system does not generate any appreciable damage. {\textcopyright} 1991, The Electrochemical Society, Inc. All rights reserved.",

author = "E. Cast{\'a}n and {De Dios}, A. and L. Bail{\'o}n and J. Barbolla and E. Cabruja and C. Dom{\'i}nquez and E. Lora-Tamayo",

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T1 - Characterization of the Electrical Damage due to Polysilicon RIE(SF6+ CL2Plasma) Etching

AU - Castán, E.

AU - De Dios, A.

AU - Bailón, L.

AU - Barbolla, J.

AU - Cabruja, E.

AU - Domínquez, C.

AU - Lora-Tamayo, E.

PY - 1992/1/1

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N2 - The electrically active damage generated by a polysilicon RIE (SF6+ Cl2plasma) etching process has been characterized in polysilicon deposited on a 500 Å thick gate oxide by the C-V and DLTS techniques. The study was carried out by measuring the charge density in the oxide and the interface state density in metal oxide semiconductor capacitors for extreme values of the controllable RIE parameters. From the results obtained we conclude that this system does not generate any appreciable damage. © 1991, The Electrochemical Society, Inc. All rights reserved.

AB - The electrically active damage generated by a polysilicon RIE (SF6+ Cl2plasma) etching process has been characterized in polysilicon deposited on a 500 Å thick gate oxide by the C-V and DLTS techniques. The study was carried out by measuring the charge density in the oxide and the interface state density in metal oxide semiconductor capacitors for extreme values of the controllable RIE parameters. From the results obtained we conclude that this system does not generate any appreciable damage. © 1991, The Electrochemical Society, Inc. All rights reserved.

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DO - 10.1149/1.2069168

M3 - Article

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VL - 139

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 1

ER -

Characterization of the Electrical Damage due to Polysilicon RIE(SF<inf>6</inf>+ CL<inf>2</inf>Plasma) Etching

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