The electrically active damage generated by a polysilicon RIE (SF6+ Cl2plasma) etching process has been characterized in polysilicon deposited on a 500 Å thick gate oxide by the C-V and DLTS techniques. The study was carried out by measuring the charge density in the oxide and the interface state density in metal oxide semiconductor capacitors for extreme values of the controllable RIE parameters. From the results obtained we conclude that this system does not generate any appreciable damage. © 1991, The Electrochemical Society, Inc. All rights reserved.
|Journal||Journal of the Electrochemical Society|
|Publication status||Published - 1 Jan 1992|