Characterization of the electrical damage due to polysilicon RIE (SF6 + Cl2 plasma) etching

E. Castán, A. de Dios, L. Bailón, J. Barbolla, C. Dominguez E. Cabruja, LORA-TAMAYO E.

Research output: Contribution to journalArticleResearch

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)193-195
JournalJournal of the Electrochemical Society
Volume139
Issue number1
Publication statusPublished - 1 Jan 1992

Cite this

Castán, E., Dios, A. D., Bailón, L., Barbolla, J., E. Cabruja, C. D., & E., LORA-TAMAYO. (1992). Characterization of the electrical damage due to polysilicon RIE (SF6 + Cl2 plasma) etching. Journal of the Electrochemical Society, 139(1), 193-195.