Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

S. Dueñas, E. Castán, L. Enriquez, J. Barbolla, J. Montserrat, LORA-TAMAYO E.

Research output: Contribution to journalArticleResearch

18 Citations (Scopus)
Original languageEnglish
Pages (from-to)1637-1648
JournalSemiconductor science and technology
Publication statusPublished - 1 Jan 1994

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