Characterization at the nanometer scale of local electron beam irradiation of CNT based devices

G. Rius, A. Verdaguer, F. A. Chaves, I. Martín, P. Godignon, E. Lora-Tamayo, D. Jiménez, F. Pérez-Murano

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9 Citations (Scopus)

Abstract

We report on the specialised characterization of the local electron beam irradiation of carbon nanotube (CNT) based devices motivated by previous studies on device electrical characteristics. In particular, Kelvin probe force microscopy provides surface potential description of the device under exposure. The experimental characterization is complemented with 3-dimensional electric field modelling of the devices using finite element methods. The modelling includes the effect of electron charging and AFM tip potential. Comparison of simulation and experiments shows good agreement and contributes to assess the distortion of electrical characteristics of CNT based devices under electron beam irradiation. © 2007 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1413-1416
JournalMicroelectronic Engineering
Volume85
DOIs
Publication statusPublished - 1 May 2008

Keywords

  • AFM
  • Carbon nanotube
  • Electron beam lithography
  • Nanodevice simulation

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