Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs

N. Ayala; J. Martin-Martinez; R. Rodriguez; M. B. Gonzalez; M. Nafria; X. Aymerich; E. Simoen

doi:https://doi.org/10.1016/j.microrel.2012.06.014

Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs

N. Ayala, J. Martin-Martinez, R. Rodriguez, M. B. Gonzalez, M. Nafria, X. Aymerich, E. Simoen

Research output: Contribution to journal › Article › Research › peer-review

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Abstract

Threshold voltage (V T) and mobility (μ) shifts due to process related variability and Channel-Hot Carrier (CHC) degradation are experimentally characterized in strained and unstrained pMOSFETs. A simulation technique to include the time-dependent variabilities of V T and μ in circuit simulators is presented and used to evaluate their effects on CMOS inverters performance. © 2012 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	1924-1927
Journal	Microelectronics Reliability
Volume	52
DOIs	https://doi.org/10.1016/j.microrel.2012.06.014
Publication status	Published - 1 Sep 2012

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title = "Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs",

abstract = "Threshold voltage (V T) and mobility (μ) shifts due to process related variability and Channel-Hot Carrier (CHC) degradation are experimentally characterized in strained and unstrained pMOSFETs. A simulation technique to include the time-dependent variabilities of V T and μ in circuit simulators is presented and used to evaluate their effects on CMOS inverters performance. {\textcopyright} 2012 Elsevier Ltd. All rights reserved.",

author = "N. Ayala and J. Martin-Martinez and R. Rodriguez and Gonzalez, {M. B.} and M. Nafria and X. Aymerich and E. Simoen",

year = "2012",

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T1 - Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs

AU - Ayala, N.

AU - Martin-Martinez, J.

AU - Rodriguez, R.

AU - Gonzalez, M. B.

AU - Nafria, M.

AU - Aymerich, X.

AU - Simoen, E.

PY - 2012/9/1

Y1 - 2012/9/1

N2 - Threshold voltage (V T) and mobility (μ) shifts due to process related variability and Channel-Hot Carrier (CHC) degradation are experimentally characterized in strained and unstrained pMOSFETs. A simulation technique to include the time-dependent variabilities of V T and μ in circuit simulators is presented and used to evaluate their effects on CMOS inverters performance. © 2012 Elsevier Ltd. All rights reserved.

AB - Threshold voltage (V T) and mobility (μ) shifts due to process related variability and Channel-Hot Carrier (CHC) degradation are experimentally characterized in strained and unstrained pMOSFETs. A simulation technique to include the time-dependent variabilities of V T and μ in circuit simulators is presented and used to evaluate their effects on CMOS inverters performance. © 2012 Elsevier Ltd. All rights reserved.

U2 - https://doi.org/10.1016/j.microrel.2012.06.014

DO - https://doi.org/10.1016/j.microrel.2012.06.014

M3 - Article

VL - 52

SP - 1924

EP - 1927

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

ER -

Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs

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