Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs

N. Ayala, J. Martin-Martinez, R. Rodriguez, M. B. Gonzalez, M. Nafria, X. Aymerich, E. Simoen

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Abstract

Threshold voltage (V T) and mobility (μ) shifts due to process related variability and Channel-Hot Carrier (CHC) degradation are experimentally characterized in strained and unstrained pMOSFETs. A simulation technique to include the time-dependent variabilities of V T and μ in circuit simulators is presented and used to evaluate their effects on CMOS inverters performance. © 2012 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)1924-1927
JournalMicroelectronics Reliability
Volume52
DOIs
Publication statusPublished - 1 Sep 2012

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