The reliability of AFM grown SiO2 as a gate oxide needs to be examined if nanodevices fabricated from the oxide are to be integrated into standard microelectronic technology. In this article we present our preliminary results on AFM fabrication and topographical characterisation of large area oxide, electrical characterisation is to follow. Roughness is the central issue of this work due to its importance in relation to the quality of ultra thin dielectrics. © 2001 Elsevier Science Ltd. All rights reserved.
|Publication status||Published - 1 Jan 2001|