Characterising the surface roughness of AFM grown SiO<inf>2</inf> on Si

D. Hill, X. Blasco, M. Porti, M. Nafrı́a, X. Aymerich

    Research output: Contribution to journalArticleResearchpeer-review

    9 Citations (Scopus)

    Abstract

    The reliability of AFM grown SiO2 as a gate oxide needs to be examined if nanodevices fabricated from the oxide are to be integrated into standard microelectronic technology. In this article we present our preliminary results on AFM fabrication and topographical characterisation of large area oxide, electrical characterisation is to follow. Roughness is the central issue of this work due to its importance in relation to the quality of ultra thin dielectrics. © 2001 Elsevier Science Ltd. All rights reserved.
    Original languageEnglish
    Pages (from-to)1077-1079
    JournalMicroelectronics Reliability
    Volume41
    DOIs
    Publication statusPublished - 1 Jan 2001

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