Channel hot-carrier degradation under AC stress in short channel nMOS devices with high-k gate stacks

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Abstract

The channel hot-carrier (CHC) degradation in nMOS transistors with high-k dielectric subjected to different AC stress configurations was studied. The influence of the gate AC stress waveform parameters on the CHC degradation was analysed, when a constant drain voltage was applied. For short channel devices, CHC degradation has been found to be dependent on duty-cycle and rise/fall times and independent of frequency. These results have been observed independently of the gate dielectric material (SiO2 or high-k). Moreover, the CHC damage in a nMOS transistor subjected to stress conditions which simulate its operation within a CMOS inverter has been also analysed. Lower degradation is observed in this case. © 2009 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1908-1910
JournalMicroelectronic Engineering
Volume86
DOIs
Publication statusPublished - 1 Jul 2009

Keywords

  • Dynamic stress
  • High-k dielectrics
  • Hot-carriers

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