The channel hot-carrier (CHC) degradation in nMOS transistors with high-k dielectric subjected to different AC stress configurations was studied. The influence of the gate AC stress waveform parameters on the CHC degradation was analysed, when a constant drain voltage was applied. For short channel devices, CHC degradation has been found to be dependent on duty-cycle and rise/fall times and independent of frequency. These results have been observed independently of the gate dielectric material (SiO2 or high-k). Moreover, the CHC damage in a nMOS transistor subjected to stress conditions which simulate its operation within a CMOS inverter has been also analysed. Lower degradation is observed in this case. © 2009 Elsevier B.V. All rights reserved.
|Publication status||Published - 1 Jul 2009|
- Dynamic stress
- High-k dielectrics