TY - JOUR
T1 - Channel-hot-carrier degradation of strained MOSFETs: A device level and nanoscale combined approach
AU - Wu, Qian
AU - Porti, Marc
AU - Bayerl, Albin
AU - Martin-Martínez, Javier
AU - Rodriguez, Rosana
AU - Nafria, Montserrat
AU - Aymerich, Xavier
AU - Simoen, Eddy
PY - 2015/3/4
Y1 - 2015/3/4
N2 - © 2015 American Vacuum Society. Strained MOSFETs with SiGe at the source/drain regions and different channel lengths have been studied at the nanoscale with a conductive atomic force microscope (CAFM) and at device level, before and after channel-hot-carrier (CHC) stress. The results show that although strained devices have a larger mobility, they are more sensitive to CHC stress. This effect has been observed to be larger in short channel devices. The higher susceptibility of strained MOSFETs to the stress has been related to a larger density of defects close to the diffusions, as suggested by CAFM data.
AB - © 2015 American Vacuum Society. Strained MOSFETs with SiGe at the source/drain regions and different channel lengths have been studied at the nanoscale with a conductive atomic force microscope (CAFM) and at device level, before and after channel-hot-carrier (CHC) stress. The results show that although strained devices have a larger mobility, they are more sensitive to CHC stress. This effect has been observed to be larger in short channel devices. The higher susceptibility of strained MOSFETs to the stress has been related to a larger density of defects close to the diffusions, as suggested by CAFM data.
UR - https://ddd.uab.cat/record/163086
U2 - https://doi.org/10.1116/1.4913950
DO - https://doi.org/10.1116/1.4913950
M3 - Article
VL - 33
M1 - 022202
ER -