Channel-hot-carrier degradation of strained MOSFETs: A device level and nanoscale combined approach

Qian Wu; Marc Porti; Albin Bayerl; Javier Martin-Martínez; Rosana Rodriguez; Montserrat Nafria; Xavier Aymerich; Eddy Simoen

doi:https://doi.org/10.1116/1.4913950

Channel-hot-carrier degradation of strained MOSFETs: A device level and nanoscale combined approach

Qian Wu, Marc Porti, Albin Bayerl, Javier Martin-Martínez, Rosana Rodriguez, Montserrat Nafria, Xavier Aymerich, Eddy Simoen

Research output: Contribution to journal › Article › Research › peer-review

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Abstract

© 2015 American Vacuum Society. Strained MOSFETs with SiGe at the source/drain regions and different channel lengths have been studied at the nanoscale with a conductive atomic force microscope (CAFM) and at device level, before and after channel-hot-carrier (CHC) stress. The results show that although strained devices have a larger mobility, they are more sensitive to CHC stress. This effect has been observed to be larger in short channel devices. The higher susceptibility of strained MOSFETs to the stress has been related to a larger density of defects close to the diffusions, as suggested by CAFM data.

Original language	English
Article number	022202
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	33
DOIs	https://doi.org/10.1116/1.4913950
Publication status	Published - 4 Mar 2015

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title = "Channel-hot-carrier degradation of strained MOSFETs: A device level and nanoscale combined approach",

abstract = "{\textcopyright} 2015 American Vacuum Society. Strained MOSFETs with SiGe at the source/drain regions and different channel lengths have been studied at the nanoscale with a conductive atomic force microscope (CAFM) and at device level, before and after channel-hot-carrier (CHC) stress. The results show that although strained devices have a larger mobility, they are more sensitive to CHC stress. This effect has been observed to be larger in short channel devices. The higher susceptibility of strained MOSFETs to the stress has been related to a larger density of defects close to the diffusions, as suggested by CAFM data.",

author = "Qian Wu and Marc Porti and Albin Bayerl and Javier Martin-Mart{\'i}nez and Rosana Rodriguez and Montserrat Nafria and Xavier Aymerich and Eddy Simoen",

year = "2015",

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doi = "https://doi.org/10.1116/1.4913950",

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TY - JOUR

T1 - Channel-hot-carrier degradation of strained MOSFETs: A device level and nanoscale combined approach

AU - Wu, Qian

AU - Porti, Marc

AU - Bayerl, Albin

AU - Martin-Martínez, Javier

AU - Rodriguez, Rosana

AU - Nafria, Montserrat

AU - Aymerich, Xavier

AU - Simoen, Eddy

PY - 2015/3/4

Y1 - 2015/3/4

N2 - © 2015 American Vacuum Society. Strained MOSFETs with SiGe at the source/drain regions and different channel lengths have been studied at the nanoscale with a conductive atomic force microscope (CAFM) and at device level, before and after channel-hot-carrier (CHC) stress. The results show that although strained devices have a larger mobility, they are more sensitive to CHC stress. This effect has been observed to be larger in short channel devices. The higher susceptibility of strained MOSFETs to the stress has been related to a larger density of defects close to the diffusions, as suggested by CAFM data.

AB - © 2015 American Vacuum Society. Strained MOSFETs with SiGe at the source/drain regions and different channel lengths have been studied at the nanoscale with a conductive atomic force microscope (CAFM) and at device level, before and after channel-hot-carrier (CHC) stress. The results show that although strained devices have a larger mobility, they are more sensitive to CHC stress. This effect has been observed to be larger in short channel devices. The higher susceptibility of strained MOSFETs to the stress has been related to a larger density of defects close to the diffusions, as suggested by CAFM data.

U2 - https://doi.org/10.1116/1.4913950

DO - https://doi.org/10.1116/1.4913950

M3 - Article

VL - 33

M1 - 022202

ER -

Channel-hot-carrier degradation of strained MOSFETs: A device level and nanoscale combined approach

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