Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

E. Amat; T. Kauerauf; R. Degraeve; R. Rodríguez; M. Nafría; X. Aymerich; G. Groeseneken

doi:https://doi.org/10.1016/j.mee.2009.05.013

Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

E. Amat, T. Kauerauf, R. Degraeve, R. Rodríguez, M. Nafría, X. Aymerich, G. Groeseneken

Research output: Contribution to journal › Article › Research › peer-review

36 Citations (Scopus)

Abstract

A comparison between pMOS and nMOS short channel transistors with high-k dielectric subjected to channel hot-carrier (CHC) stress is presented. Smaller CHC degradation is observed in pMOS devices. At high temperature, the CHC degradation increases for pMOS and nMOS. The temperature dependence of the CHC degradation has been explained, for both transistor types, by considering a larger influence of a bias temperature instability (BTI)-related component of the total CHC induced degradation. © 2009 Elsevier B.V.

Original language	English
Pages (from-to)	47-50
Journal	Microelectronic Engineering
Volume	87
DOIs	https://doi.org/10.1016/j.mee.2009.05.013
Publication status	Published - 1 Jan 2010

Keywords

High-k
Hot-carriers
Reliability
Temperature

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title = "Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack",

abstract = "A comparison between pMOS and nMOS short channel transistors with high-k dielectric subjected to channel hot-carrier (CHC) stress is presented. Smaller CHC degradation is observed in pMOS devices. At high temperature, the CHC degradation increases for pMOS and nMOS. The temperature dependence of the CHC degradation has been explained, for both transistor types, by considering a larger influence of a bias temperature instability (BTI)-related component of the total CHC induced degradation. {\textcopyright} 2009 Elsevier B.V.",

keywords = "High-k, Hot-carriers, Reliability, Temperature",

author = "E. Amat and T. Kauerauf and R. Degraeve and R. Rodr{\'i}guez and M. Nafr{\'i}a and X. Aymerich and G. Groeseneken",

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doi = "https://doi.org/10.1016/j.mee.2009.05.013",

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TY - JOUR

T1 - Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

AU - Amat, E.

AU - Kauerauf, T.

AU - Degraeve, R.

AU - Rodríguez, R.

AU - Nafría, M.

AU - Aymerich, X.

AU - Groeseneken, G.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - A comparison between pMOS and nMOS short channel transistors with high-k dielectric subjected to channel hot-carrier (CHC) stress is presented. Smaller CHC degradation is observed in pMOS devices. At high temperature, the CHC degradation increases for pMOS and nMOS. The temperature dependence of the CHC degradation has been explained, for both transistor types, by considering a larger influence of a bias temperature instability (BTI)-related component of the total CHC induced degradation. © 2009 Elsevier B.V.

AB - A comparison between pMOS and nMOS short channel transistors with high-k dielectric subjected to channel hot-carrier (CHC) stress is presented. Smaller CHC degradation is observed in pMOS devices. At high temperature, the CHC degradation increases for pMOS and nMOS. The temperature dependence of the CHC degradation has been explained, for both transistor types, by considering a larger influence of a bias temperature instability (BTI)-related component of the total CHC induced degradation. © 2009 Elsevier B.V.

KW - High-k

KW - Hot-carriers

KW - Reliability

KW - Temperature

U2 - https://doi.org/10.1016/j.mee.2009.05.013

DO - https://doi.org/10.1016/j.mee.2009.05.013

M3 - Article

SN - 0167-9317

VL - 87

SP - 47

EP - 50

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

Abstract

Keywords

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