The degradation of NMOS and PMOS transistors within CMOS inverters has been analyzed. Channel-hot-carrier (CHC) degradation and/or bias temperature instabilities (BTIs) are identified as aging mechanisms, and their implications at the device and circuit levels are discussed. Device- and circuit-level results have been linked using the BSIM4 SPICE model. © 2009 IEEE.
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 7 Sep 2009|
- Channel hot carriers