Channel-hot-carrier degradation and bias temperature instabilities in CMOS inverters

Javier Martín-Martínez, Simone Gerardin, Esteve Amat, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Alessandro Paccagnella, Gabriella Ghidini

Research output: Contribution to journalArticleResearchpeer-review

19 Citations (Scopus)


The degradation of NMOS and PMOS transistors within CMOS inverters has been analyzed. Channel-hot-carrier (CHC) degradation and/or bias temperature instabilities (BTIs) are identified as aging mechanisms, and their implications at the device and circuit levels are discussed. Device- and circuit-level results have been linked using the BSIM4 SPICE model. © 2009 IEEE.
Original languageEnglish
Pages (from-to)2155-2159
JournalIEEE Transactions on Electron Devices
Publication statusPublished - 7 Sep 2009


  • BTI
  • CMOS
  • Channel hot carriers
  • Reliability


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