CAFM Experimental Considerations and Measurement Methodology for In-Line Monitoring and Quantitative Analysis of III-V Materials Defects

M. Porti, V. Iglesias, Q. Wu, C. Couso, S. Claramunt, M. Nafría, A. Cordes, G. Bersuker

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4 Citations (Scopus)

Abstract

© 2016 IEEE. To continue technology scaling, a new generation of high-performance devices are considered to be implemented using III-V semiconductors, which need to be grown over the conventional Si substrate. However, due to the lattice mismatch between the III-V and silicon materials, the former tend to develop significant density of structural defects [specifically, threading dislocations (TDs)], which can adversely affect device electrical characteristics. Conductive atomic force microscope (CAFM) technique is among the most promising tools for the identification and analysis of TDs in a nanoscale range although obtaining reliable quantitative data requires precise controls over the measurements conditions. In this study, CAFM technique has been applied for TDs detection and analysis in III-V films, and tool requirements and measurement methodology are discussed.
Original languageEnglish
Article number7600461
Pages (from-to)986-992
JournalIEEE Transactions on Nanotechnology
Volume15
Issue number6
DOIs
Publication statusPublished - 1 Nov 2016

Keywords

  • CAFM
  • III-V semiconductors
  • semiconductor defects
  • threading dislocation

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