© 2016 IEEE. To continue technology scaling, a new generation of high-performance devices are considered to be implemented using III-V semiconductors, which need to be grown over the conventional Si substrate. However, due to the lattice mismatch between the III-V and silicon materials, the former tend to develop significant density of structural defects [specifically, threading dislocations (TDs)], which can adversely affect device electrical characteristics. Conductive atomic force microscope (CAFM) technique is among the most promising tools for the identification and analysis of TDs in a nanoscale range although obtaining reliable quantitative data requires precise controls over the measurements conditions. In this study, CAFM technique has been applied for TDs detection and analysis in III-V films, and tool requirements and measurement methodology are discussed.
- III-V semiconductors
- semiconductor defects
- threading dislocation
Porti, M., Iglesias, V., Wu, Q., Couso, C., Claramunt, S., Nafría, M., Cordes, A., & Bersuker, G. (2016). CAFM Experimental Considerations and Measurement Methodology for In-Line Monitoring and Quantitative Analysis of III-V Materials Defects. IEEE Transactions on Nanotechnology, 15(6), 986-992. . https://doi.org/10.1109/TNANO.2016.2619488