TY - JOUR
T1 - CAFM Experimental Considerations and Measurement Methodology for In-Line Monitoring and Quantitative Analysis of III-V Materials Defects
AU - Porti, M.
AU - Iglesias, V.
AU - Wu, Q.
AU - Couso, C.
AU - Claramunt, S.
AU - Nafría, M.
AU - Cordes, A.
AU - Bersuker, G.
PY - 2016/11/1
Y1 - 2016/11/1
N2 - © 2016 IEEE. To continue technology scaling, a new generation of high-performance devices are considered to be implemented using III-V semiconductors, which need to be grown over the conventional Si substrate. However, due to the lattice mismatch between the III-V and silicon materials, the former tend to develop significant density of structural defects [specifically, threading dislocations (TDs)], which can adversely affect device electrical characteristics. Conductive atomic force microscope (CAFM) technique is among the most promising tools for the identification and analysis of TDs in a nanoscale range although obtaining reliable quantitative data requires precise controls over the measurements conditions. In this study, CAFM technique has been applied for TDs detection and analysis in III-V films, and tool requirements and measurement methodology are discussed.
AB - © 2016 IEEE. To continue technology scaling, a new generation of high-performance devices are considered to be implemented using III-V semiconductors, which need to be grown over the conventional Si substrate. However, due to the lattice mismatch between the III-V and silicon materials, the former tend to develop significant density of structural defects [specifically, threading dislocations (TDs)], which can adversely affect device electrical characteristics. Conductive atomic force microscope (CAFM) technique is among the most promising tools for the identification and analysis of TDs in a nanoscale range although obtaining reliable quantitative data requires precise controls over the measurements conditions. In this study, CAFM technique has been applied for TDs detection and analysis in III-V films, and tool requirements and measurement methodology are discussed.
KW - CAFM
KW - III-V semiconductors
KW - semiconductor defects
KW - threading dislocation
U2 - 10.1109/TNANO.2016.2619488
DO - 10.1109/TNANO.2016.2619488
M3 - Article
VL - 15
SP - 986
EP - 992
JO - IEEE Transactions on Nanotechnology
JF - IEEE Transactions on Nanotechnology
SN - 1536-125X
IS - 6
M1 - 7600461
ER -