Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced-CAFM,

X. Blasco, M. Nafría, X. Aymerich, J. Pétry, W. Vandervorst

Research output: Contribution to journal › Article › Research

11 Citations (Scopus)

Original language	English
Pages (from-to)	811-814
Journal	Microelectronics and Reliability
Volume	45
Issue number	5-6
DOIs	https://doi.org/10.1016/j.microrel.2004.11.042
Publication status	Published - 1 Jan 2005

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title = "Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced-CAFM,",

author = "X. Blasco and M. Nafr{\'i}a and X. Aymerich and J. P{\'e}try and W. Vandervorst",

year = "2005",

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doi = "10.1016/j.microrel.2004.11.042",

language = "English",

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T1 - Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced-CAFM,

AU - Blasco, X.

AU - Nafría, M.

AU - Aymerich, X.

AU - Pétry, J.

AU - Vandervorst, W.

PY - 2005/1/1

Y1 - 2005/1/1

U2 - 10.1016/j.microrel.2004.11.042

DO - 10.1016/j.microrel.2004.11.042

M3 - Article

VL - 45

SP - 811

EP - 814

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 5-6

ER -