Breakdown spot electrical properties at the nanoscale and their impact on the post-breakdown performance of MOS devices

M. Porti, R. Fernandez, R. Rodriguez, M. Nafria, X. Aymerich, S.Gehar (editor) Kimberly (Editor)

Research output: Chapter in BookChapterResearch

Original languageEnglish
Title of host publicationNanophysics, Nanoclusters and Nanodevices
Place of PublicationNova York (US)
Pages125-139
Number of pages14
Edition1
Publication statusPublished - 1 Jan 2007

Cite this