Breakdown of thin gate silicon dioxide films. A review

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	871-905
Journal	Microelectronics and Reliability
Volume	36
Issue number	7/8
Publication status	Published - 1 Jan 1996

Cite this

@article{0f2590e375724390a56be575291934fd,

title = "Breakdown of thin gate silicon dioxide films. A review",

author = "M. Nafr{\'i}a and J. Su{\~n}{\'e} and X. Aymerich",

year = "1996",

month = jan,

day = "1",

language = "English",

volume = "36",

pages = "871--905",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "7/8",

}