Abstract
It is shown that quantum phenomena in electron devices, such as tunneling of electrons, can be modeled using Bohm trajectories. Fowler-Nordheim tunneling in thin-oxide MOS structures and resonant tunneling in double barrier diodes are considered.
Original language | English |
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Pages (from-to) | 125-128 |
Journal | Microelectronic Engineering |
Volume | 36 |
DOIs | |
Publication status | Published - 1 Jan 1997 |