Bohm trajectories for the modeling of tunneling devices

J. Suñé, X. Oriols, J. J. García-García, F. Martín, T. González, J. Mateos, D. Pardo

    Research output: Contribution to journalArticleResearchpeer-review

    3 Citations (Scopus)

    Abstract

    It is shown that quantum phenomena in electron devices, such as tunneling of electrons, can be modeled using Bohm trajectories. Fowler-Nordheim tunneling in thin-oxide MOS structures and resonant tunneling in double barrier diodes are considered.
    Original languageEnglish
    Pages (from-to)125-128
    JournalMicroelectronic Engineering
    Volume36
    DOIs
    Publication statusPublished - 1 Jan 1997

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