TY - JOUR
T1 - Bohm trajectories for the modeling of tunneling devices
AU - Suñé, J.
AU - Oriols, X.
AU - García-García, J. J.
AU - Martín, F.
AU - González, T.
AU - Mateos, J.
AU - Pardo, D.
PY - 1997/1/1
Y1 - 1997/1/1
N2 - It is shown that quantum phenomena in electron devices, such as tunneling of electrons, can be modeled using Bohm trajectories. Fowler-Nordheim tunneling in thin-oxide MOS structures and resonant tunneling in double barrier diodes are considered.
AB - It is shown that quantum phenomena in electron devices, such as tunneling of electrons, can be modeled using Bohm trajectories. Fowler-Nordheim tunneling in thin-oxide MOS structures and resonant tunneling in double barrier diodes are considered.
U2 - https://doi.org/10.1016/S0167-9317(97)00031-2
DO - https://doi.org/10.1016/S0167-9317(97)00031-2
M3 - Article
VL - 36
SP - 125
EP - 128
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -