Bohm trajectories for the modeling of tunneling devices

J. Suñé; X. Oriols; J. J. García-García; F. Martín; T. González; J. Mateos; D. Pardo

doi:https://doi.org/10.1016/S0167-9317(97)00031-2

Bohm trajectories for the modeling of tunneling devices

J. Suñé, X. Oriols, J. J. García-García, F. Martín, T. González, J. Mateos, D. Pardo

Research output: Contribution to journal › Article › Research › peer-review

3 Citations (Scopus)

Abstract

It is shown that quantum phenomena in electron devices, such as tunneling of electrons, can be modeled using Bohm trajectories. Fowler-Nordheim tunneling in thin-oxide MOS structures and resonant tunneling in double barrier diodes are considered.

Original language	English
Pages (from-to)	125-128
Journal	Microelectronic Engineering
Volume	36
DOIs	https://doi.org/10.1016/S0167-9317(97)00031-2
Publication status	Published - 1 Jan 1997

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@article{0899abc5ac6746659e7c7085be9c39fb,

title = "Bohm trajectories for the modeling of tunneling devices",

abstract = "It is shown that quantum phenomena in electron devices, such as tunneling of electrons, can be modeled using Bohm trajectories. Fowler-Nordheim tunneling in thin-oxide MOS structures and resonant tunneling in double barrier diodes are considered.",

author = "J. Su{\~n}{\'e} and X. Oriols and Garc{\'i}a-Garc{\'i}a, {J. J.} and F. Mart{\'i}n and T. Gonz{\'a}lez and J. Mateos and D. Pardo",

year = "1997",

month = jan,

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doi = "https://doi.org/10.1016/S0167-9317(97)00031-2",

language = "English",

volume = "36",

pages = "125--128",

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T1 - Bohm trajectories for the modeling of tunneling devices

AU - Suñé, J.

AU - Oriols, X.

AU - García-García, J. J.

AU - Martín, F.

AU - González, T.

AU - Mateos, J.

AU - Pardo, D.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - It is shown that quantum phenomena in electron devices, such as tunneling of electrons, can be modeled using Bohm trajectories. Fowler-Nordheim tunneling in thin-oxide MOS structures and resonant tunneling in double barrier diodes are considered.

AB - It is shown that quantum phenomena in electron devices, such as tunneling of electrons, can be modeled using Bohm trajectories. Fowler-Nordheim tunneling in thin-oxide MOS structures and resonant tunneling in double barrier diodes are considered.

U2 - https://doi.org/10.1016/S0167-9317(97)00031-2

DO - https://doi.org/10.1016/S0167-9317(97)00031-2

M3 - Article

VL - 36

SP - 125

EP - 128

ER -