TY - JOUR
T1 - Band bending and quasi-2deg in the metallized β-SiC(001) surface
AU - Rurali, R.
AU - Wachowicz, E.
AU - Hyldgaard, P.
AU - Ordejón, P.
PY - 2008/10/1
Y1 - 2008/10/1
N2 - We study the mechanism leading to the metallization of the β-SiC(001) Si-rich surface induced by hydrogen adsorption. We analyze the effects of band bending and demonstrate the existence of a quasi-2D electron gas, which originates from the donation of electrons from adsorbed hydrogen to bulk conduction states. We also provide a simple model that captures the main features of the results of first-principles calculations, and uncovers the basic physics of the process. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
AB - We study the mechanism leading to the metallization of the β-SiC(001) Si-rich surface induced by hydrogen adsorption. We analyze the effects of band bending and demonstrate the existence of a quasi-2D electron gas, which originates from the donation of electrons from adsorbed hydrogen to bulk conduction states. We also provide a simple model that captures the main features of the results of first-principles calculations, and uncovers the basic physics of the process. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
U2 - https://doi.org/10.1002/pssr.200802166
DO - https://doi.org/10.1002/pssr.200802166
M3 - Article
VL - 2
SP - 218
EP - 220
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
ER -