Band bending and quasi-2deg in the metallized β-SiC(001) surface

R. Rurali, E. Wachowicz, P. Hyldgaard, P. Ordejón

Research output: Contribution to journalArticleResearchpeer-review

9 Citations (Scopus)


We study the mechanism leading to the metallization of the β-SiC(001) Si-rich surface induced by hydrogen adsorption. We analyze the effects of band bending and demonstrate the existence of a quasi-2D electron gas, which originates from the donation of electrons from adsorbed hydrogen to bulk conduction states. We also provide a simple model that captures the main features of the results of first-principles calculations, and uncovers the basic physics of the process. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish
Pages (from-to)218-220
JournalPhysica Status Solidi - Rapid Research Letters
Publication statusPublished - 1 Oct 2008


Dive into the research topics of 'Band bending and quasi-2deg in the metallized β-SiC(001) surface'. Together they form a unique fingerprint.

Cite this