Assessment of the variability of the I-V characteristic of HfO2-based resistive switching devices and its simulation using the quasi-static memdiode model
Emili Salvador Aguilera, Mireia Bargallo Gonzalez, Francesca Campabadal, Javier Martin-Martinez, Rosana Rodriguez, Enrique Miranda
Dive into the research topics of 'Assessment of the variability of the I-V characteristic of HfO2-based resistive switching devices and its simulation using the quasi-static memdiode model'. Together they form a unique fingerprint.