Al recoil implantation have been shown to be a possible alternative to direct Al ion implantation to avoid usual problems linked with Al sources. Poor efficiency of the recoil + annealing process is observed if no barrier or an oxyde screen layers are used. This problem can be solved using a Si3N4 screen layer. Then, P-N and N+/P/N structures can be obtained with deep low doped P-well with reduced thermal budget. © 1999 Elsevier Science B.V. All rights reserved.
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 1 Jan 1999|
- Aluminum dopant
- Power devices
- Recoil implantation
Godignon, P., Morvan, E., Montserrat, J., Jordà, X., Flores, D., & Rebollo, J. (1999). As-Al recoil implantation through Si<inf>3</inf>N<inf>4</inf> barrier layer. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 147(1-4), 101-105. https://doi.org/10.1016/S0168-583X(98)00584-9