As-Al recoil implantation through Si<inf>3</inf>N<inf>4</inf> barrier layer

P. Godignon, E. Morvan, J. Montserrat, X. Jordà, D. Flores, J. Rebollo

    Research output: Contribution to journalArticleResearchpeer-review

    Abstract

    Al recoil implantation have been shown to be a possible alternative to direct Al ion implantation to avoid usual problems linked with Al sources. Poor efficiency of the recoil + annealing process is observed if no barrier or an oxyde screen layers are used. This problem can be solved using a Si3N4 screen layer. Then, P-N and N+/P/N structures can be obtained with deep low doped P-well with reduced thermal budget. © 1999 Elsevier Science B.V. All rights reserved.
    Original languageEnglish
    Pages (from-to)101-105
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume147
    Issue number1-4
    DOIs
    Publication statusPublished - 1 Jan 1999

    Keywords

    • Aluminum dopant
    • Power devices
    • Recoil implantation

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