As-Al recoil implantation through Si<inf>3</inf>N<inf>4</inf> barrier layer

P. Godignon; E. Morvan; J. Montserrat; X. Jordà; D. Flores; J. Rebollo

doi:10.1016/S0168-583X(98)00584-9

As-Al recoil implantation through Si<inf>3</inf>N<inf>4</inf> barrier layer

P. Godignon, E. Morvan, J. Montserrat, X. Jordà, D. Flores, J. Rebollo

Research output: Contribution to journal › Article › Research › peer-review

Abstract

Al recoil implantation have been shown to be a possible alternative to direct Al ion implantation to avoid usual problems linked with Al sources. Poor efficiency of the recoil + annealing process is observed if no barrier or an oxyde screen layers are used. This problem can be solved using a Si3N4 screen layer. Then, P-N and N+/P/N structures can be obtained with deep low doped P-well with reduced thermal budget. © 1999 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	101-105
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	147
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(98)00584-9
Publication status	Published - 1 Jan 1999

Keywords

Aluminum dopant
Power devices
Recoil implantation

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10.1016/S0168-583X(98)00584-9

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title = "As-Al recoil implantation through Si3N4 barrier layer",

abstract = "Al recoil implantation have been shown to be a possible alternative to direct Al ion implantation to avoid usual problems linked with Al sources. Poor efficiency of the recoil + annealing process is observed if no barrier or an oxyde screen layers are used. This problem can be solved using a Si3N4 screen layer. Then, P-N and N+/P/N structures can be obtained with deep low doped P-well with reduced thermal budget. {\textcopyright} 1999 Elsevier Science B.V. All rights reserved.",

keywords = "Aluminum dopant, Power devices, Recoil implantation",

author = "P. Godignon and E. Morvan and J. Montserrat and X. Jord{\`a} and D. Flores and J. Rebollo",

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T1 - As-Al recoil implantation through Si3N4 barrier layer

AU - Godignon, P.

AU - Morvan, E.

AU - Montserrat, J.

AU - Jordà, X.

AU - Flores, D.

AU - Rebollo, J.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Al recoil implantation have been shown to be a possible alternative to direct Al ion implantation to avoid usual problems linked with Al sources. Poor efficiency of the recoil + annealing process is observed if no barrier or an oxyde screen layers are used. This problem can be solved using a Si3N4 screen layer. Then, P-N and N+/P/N structures can be obtained with deep low doped P-well with reduced thermal budget. © 1999 Elsevier Science B.V. All rights reserved.

AB - Al recoil implantation have been shown to be a possible alternative to direct Al ion implantation to avoid usual problems linked with Al sources. Poor efficiency of the recoil + annealing process is observed if no barrier or an oxyde screen layers are used. This problem can be solved using a Si3N4 screen layer. Then, P-N and N+/P/N structures can be obtained with deep low doped P-well with reduced thermal budget. © 1999 Elsevier Science B.V. All rights reserved.

KW - Aluminum dopant

KW - Power devices

KW - Recoil implantation

U2 - 10.1016/S0168-583X(98)00584-9

DO - 10.1016/S0168-583X(98)00584-9

M3 - Article

SN - 0168-583X

VL - 147

SP - 101

EP - 105

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

As-Al recoil implantation through Si<inf>3</inf>N<inf>4</inf> barrier layer

Abstract

Keywords

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