Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells

Jordi Munoz Gorriz; Mireia Bargallo Gonzalez; Francesca Campabadal; Jordi Sune; Enrique A. Miranda

doi:10.1109/LED.2020.3033709

Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells

Jordi Munoz Gorriz^*, Mireia Bargallo Gonzalez, Francesca Campabadal, Jordi Sune, Enrique A. Miranda

^*Corresponding author for this work

Department of Electronic Engineering

Campus UAB

Research output: Contribution to journal › Article › Research › peer-review

6 Citations (Scopus)

Abstract

Time statistics for successive breakdown (BD) events in Al2O3/HfO2-based nanolaminates aimed to the development of multilevel one-time programmable (OTP) memory cells is investigated. The clustering model is shown to account for the departure of the experimental data from the standard Weibull model attributed to the initial leakage current dispersion. An equivalent electrical circuit model is used to represent the stepwise current increase triggered by the appearance of multiple BD sites. Correlation effects in the order statistics are ascribed to a reduction of the effective stress voltage caused by the presence of a series resistance. It is shown that the E -model acceleration law for dielectric BD is consistent with the data obtained from our antifuse cells.

Original language	English
Article number	9239294
Pages (from-to)	1770-1773
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	12
DOIs	https://doi.org/10.1109/LED.2020.3033709
Publication status	Published - Dec 2020

Keywords

Clustering model
memory
one-time-programmable
OTP
oxide breakdown

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10.1109/LED.2020.3033709

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title = "Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells",

abstract = "Time statistics for successive breakdown (BD) events in Al2O3/HfO2-based nanolaminates aimed to the development of multilevel one-time programmable (OTP) memory cells is investigated. The clustering model is shown to account for the departure of the experimental data from the standard Weibull model attributed to the initial leakage current dispersion. An equivalent electrical circuit model is used to represent the stepwise current increase triggered by the appearance of multiple BD sites. Correlation effects in the order statistics are ascribed to a reduction of the effective stress voltage caused by the presence of a series resistance. It is shown that the E -model acceleration law for dielectric BD is consistent with the data obtained from our antifuse cells.",

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author = "Gorriz, {Jordi Munoz} and Gonzalez, {Mireia Bargallo} and Francesca Campabadal and Jordi Sune and Miranda, {Enrique A.}",

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AU - Gonzalez, Mireia Bargallo

AU - Campabadal, Francesca

AU - Sune, Jordi

AU - Miranda, Enrique A.

PY - 2020/12

Y1 - 2020/12

N2 - Time statistics for successive breakdown (BD) events in Al2O3/HfO2-based nanolaminates aimed to the development of multilevel one-time programmable (OTP) memory cells is investigated. The clustering model is shown to account for the departure of the experimental data from the standard Weibull model attributed to the initial leakage current dispersion. An equivalent electrical circuit model is used to represent the stepwise current increase triggered by the appearance of multiple BD sites. Correlation effects in the order statistics are ascribed to a reduction of the effective stress voltage caused by the presence of a series resistance. It is shown that the E -model acceleration law for dielectric BD is consistent with the data obtained from our antifuse cells.

AB - Time statistics for successive breakdown (BD) events in Al2O3/HfO2-based nanolaminates aimed to the development of multilevel one-time programmable (OTP) memory cells is investigated. The clustering model is shown to account for the departure of the experimental data from the standard Weibull model attributed to the initial leakage current dispersion. An equivalent electrical circuit model is used to represent the stepwise current increase triggered by the appearance of multiple BD sites. Correlation effects in the order statistics are ascribed to a reduction of the effective stress voltage caused by the presence of a series resistance. It is shown that the E -model acceleration law for dielectric BD is consistent with the data obtained from our antifuse cells.

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KW - one-time-programmable

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KW - oxide breakdown

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Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells

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Keywords

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