Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs

Oana Moldovan, Benjamin Iñiguez, David Jiménez, James Roig

Research output: Contribution to journalArticleResearchpeer-review

47 Citations (Scopus)

Abstract

We present an analytical and continuous charge model for cylindrical undoped surrounding-gate MOSFETs, from which analytical expressions of all total capacitances are obtained. The model is based on a unified charge control model derived from Poisson equation. The drain current, charge, and capacitances are written as continuous explicit functions of the applied voltages. The calculated capacitance characteristics show excellent agreement with three-dimensional numerical device simulations. © 2007 IEEE.
Original languageEnglish
Pages (from-to)162-165
JournalIEEE Transactions on Electron Devices
Volume54
DOIs
Publication statusPublished - 1 Jan 2007

Keywords

  • Compact device modelling
  • Intrinsic capacitances
  • Surrounding-gate (SGT) MOSFET

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