We present an analytical and continuous charge model for cylindrical undoped surrounding-gate MOSFETs, from which analytical expressions of all total capacitances are obtained. The model is based on a unified charge control model derived from Poisson equation. The drain current, charge, and capacitances are written as continuous explicit functions of the applied voltages. The calculated capacitance characteristics show excellent agreement with three-dimensional numerical device simulations. © 2007 IEEE.
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1 Jan 2007|
- Compact device modelling
- Intrinsic capacitances
- Surrounding-gate (SGT) MOSFET