Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs

Oana Moldovan; Benjamin Iñiguez; David Jiménez; James Roig

doi:https://doi.org/10.1109/TED.2006.887213

Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs

Oana Moldovan, Benjamin Iñiguez, David Jiménez, James Roig

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

47 Citations (Scopus)

Abstract

We present an analytical and continuous charge model for cylindrical undoped surrounding-gate MOSFETs, from which analytical expressions of all total capacitances are obtained. The model is based on a unified charge control model derived from Poisson equation. The drain current, charge, and capacitances are written as continuous explicit functions of the applied voltages. The calculated capacitance characteristics show excellent agreement with three-dimensional numerical device simulations. © 2007 IEEE.

Original language	English
Pages (from-to)	162-165
Journal	IEEE Transactions on Electron Devices
Volume	54
DOIs	https://doi.org/10.1109/TED.2006.887213
Publication status	Published - 1 Jan 2007

Keywords

Compact device modelling
Intrinsic capacitances
Surrounding-gate (SGT) MOSFET

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https://doi.org/10.1109/TED.2006.887213

Cite this

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title = "Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs",

abstract = "We present an analytical and continuous charge model for cylindrical undoped surrounding-gate MOSFETs, from which analytical expressions of all total capacitances are obtained. The model is based on a unified charge control model derived from Poisson equation. The drain current, charge, and capacitances are written as continuous explicit functions of the applied voltages. The calculated capacitance characteristics show excellent agreement with three-dimensional numerical device simulations. {\textcopyright} 2007 IEEE.",

keywords = "Compact device modelling, Intrinsic capacitances, Surrounding-gate (SGT) MOSFET",

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AU - Moldovan, Oana

AU - Iñiguez, Benjamin

AU - Jiménez, David

AU - Roig, James

PY - 2007/1/1

Y1 - 2007/1/1

N2 - We present an analytical and continuous charge model for cylindrical undoped surrounding-gate MOSFETs, from which analytical expressions of all total capacitances are obtained. The model is based on a unified charge control model derived from Poisson equation. The drain current, charge, and capacitances are written as continuous explicit functions of the applied voltages. The calculated capacitance characteristics show excellent agreement with three-dimensional numerical device simulations. © 2007 IEEE.

AB - We present an analytical and continuous charge model for cylindrical undoped surrounding-gate MOSFETs, from which analytical expressions of all total capacitances are obtained. The model is based on a unified charge control model derived from Poisson equation. The drain current, charge, and capacitances are written as continuous explicit functions of the applied voltages. The calculated capacitance characteristics show excellent agreement with three-dimensional numerical device simulations. © 2007 IEEE.

KW - Compact device modelling

KW - Intrinsic capacitances

KW - Surrounding-gate (SGT) MOSFET

U2 - https://doi.org/10.1109/TED.2006.887213

DO - https://doi.org/10.1109/TED.2006.887213

M3 - Article

VL - 54

SP - 162

EP - 165

ER -

Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs

Abstract

Keywords

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