Analytical cell-based model for the breakdown statistics of multilayer insulator stacks

Jordi Sune, Santi Tous, Ernest Y. Wu

Research output: Contribution to journalArticleResearchpeer-review

40 Citations (Scopus)

Abstract

A fully analytical cell-based model is proposed to describe the breakdown (BD) statistics of multiple-layer insulator stacks. The model is shown to be completely equivalent to the full percolation model by comparing with recently published kinetic Monte Carlo simulations. The role of an initial density of native defects in the as-grown oxide and the time-dependent generation of inert defects are successfully addressed. The effect of the generation of interface states on the stack BD statistics is also incorporated into the model. © 2009 IEEE.
Original languageEnglish
Article number5332376
Pages (from-to)1359-1361
JournalIEEE Electron Device Letters
Volume30
DOIs
Publication statusPublished - 1 Dec 2009

Keywords

  • Dielectric breakdown (BD)
  • MOS devices
  • Reliability theory

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