Analytic modeling of leakage current through multiple breakdown paths in SiO₂ films

Keyphrases

• Leakage Current 100%
• Multiple Breakdown 100%
• Breakdown Path 100%
• Hard Breakdown 100%
• SiO2 Film 100%
• Analytic Modeling 100%
• Three-dimensional (3D) 50%
• MOS Devices 50%
• Small Area 50%
• Dielectric Breakdown 50%
• Circuit Simulator 50%
• Compact Model 50%
• Mesoscopic 50%
• Ultrathin 50%
• Potential Barrier 50%
• Current-voltage Characteristics 50%
• Quantum Point Contact 50%
• Current Regime 50%
• Effective Potential 50%
• Transverse Momentum 50%
• Analytic Expression 50%
• Conducting Channels 50%
• Conducting Path 50%
• Conducting System 50%
• Soft Breakdown 50%
• Post-breakdown 50%
• Breakdown Current 50%
• Multiple Events 50%
• Oxide Breakdown 50%
• Gate Insulator 50%
• Gate Leakage Current 50%
• Conduction Mode 50%
• Stress Induced Leakage Current 50%
• Large Spot 50%
• Spot Area 50%
• Charge Transport Processes 50%

Engineering

• Sio2 Film 100%
• Charge Transport 50%
• Contact Point 50%
• Stress Induced Leakage Current 50%
• Transport Process 50%
• Dielectrics 50%
• Current-Voltage Characteristic 50%

Physics

• Physics 100%
• Electrical Breakdown 50%
• Potential Barrier 50%
• Transverse Momentum 50%
• Transport Process 50%
• Charge Transfer 50%