Analytic model for the surface potential and drain current in negative capacitance field-effect transistors

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Abstract

In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance (NC) region could act as a step-up converter of the surface potential in a metaloxidesemiconductor structure, opening a new route for the realization of transistors with steeper subthreshold characteristics (S < 60mV/dec). In this paper, a comprehensive physics-based surface potential and a drain current model for the NC field-effect transistor are reported. The model is aimed to evaluate the potentiality of such transistors for low-power switching applications. This paper also sheds light on how operation in the NC region can be experimentally detected. © 2006 IEEE.
Original languageEnglish
Article number5555966
Pages (from-to)2405-2409
JournalIEEE Transactions on Electron Devices
Volume57
DOIs
Publication statusPublished - 1 Oct 2010

Keywords

  • Bipolar junction transistor (BJT)
  • current gain
  • emitter width
  • emitter-base distance
  • silicon carbide (SiC)
  • simulations

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