Analytic model for the post-breakdown conductance of sub-5-nm SiO<inf>2</inf> gate oxides

Keyphrases

• Silica 100%
• Gate Oxide 100%
• Conductance 100%
• Post-breakdown 100%
• Analytic Model 100%
• Sub-5 Nm 100%
• Practical Implementation 50%
• Oxide-based 50%
• Quantum Point Contact 50%
• Proposed Equation 50%
• Semiconductor Electrode 50%
• Diode Equation 50%
• Low Bias 50%
• Lambert W Function 50%
• Ultra-thin Gate Oxide 50%
• Alternative Formulations 50%

Engineering

• Gate Oxide 100%
• Silicon Dioxide 100%
• Contact Model 50%

Physics

• Conductance 100%