Analytic model for the post-breakdown conductance of sub-5-nm SiO<inf>2</inf> gate oxides

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Abstract

A new model for the post-breakdown conductance of ultrathin gate oxides based on the generalized diode equation is presented. The model is expressed in terms of the Lambert W function, that is, the inverse of the function w → wew. We show that this alternative formulation improves a previous one, the quantum point contact model, especially in the low bias range, where the role played by the semiconductor electrodes cannot be overlooked. The practical implementation of the proposed equations is discussed. © 2005 IEEE.
Original languageEnglish
Pages (from-to)673-675
JournalIEEE Electron Device Letters
Volume26
DOIs
Publication statusPublished - 1 Sep 2005

Keywords

  • Breakdown
  • MOS
  • Reliability

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