Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect

E. Miranda; F. Palumbo

doi:10.1016/j.sse.2011.03.015

Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect

E. Miranda, F. Palumbo

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

11 Citations (Scopus)

Abstract

It is shown in this communication that the Fowler-Nordheim (FN) tunneling expression for the current-voltage (I-V) characteristic can be analytically inverted so that an exact expression for the voltage-current (V-I) characteristic can be obtained. The solution of the resulting implicit equation is found using the Lambert W function, i.e. the solution of the transcendental equation wew = x. The reported expressions are supported by experimental I-V curves measured in thin (≈5 nm) SiO2 films in MOS capacitors. The analysis includes the case of a tunneling oxide with a large series resistance. For practical purposes, a closed-form expression for W based on a Padé-type approximation is also provided. © 2011 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	93-95
Journal	Solid-State Electronics
Volume	61
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.03.015
Publication status	Published - 1 Jul 2011

Keywords

Fowler-Nordheim
MOS
Tunneling

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10.1016/j.sse.2011.03.015

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title = "Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect",

abstract = "It is shown in this communication that the Fowler-Nordheim (FN) tunneling expression for the current-voltage (I-V) characteristic can be analytically inverted so that an exact expression for the voltage-current (V-I) characteristic can be obtained. The solution of the resulting implicit equation is found using the Lambert W function, i.e. the solution of the transcendental equation wew = x. The reported expressions are supported by experimental I-V curves measured in thin (≈5 nm) SiO2 films in MOS capacitors. The analysis includes the case of a tunneling oxide with a large series resistance. For practical purposes, a closed-form expression for W based on a Pad{\'e}-type approximation is also provided. {\textcopyright} 2011 Elsevier Ltd. All rights reserved.",

keywords = "Fowler-Nordheim, MOS, Tunneling",

author = "E. Miranda and F. Palumbo",

year = "2011",

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journal = "Solid-State Electronics",

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T1 - Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect

AU - Miranda, E.

AU - Palumbo, F.

PY - 2011/7/1

Y1 - 2011/7/1

N2 - It is shown in this communication that the Fowler-Nordheim (FN) tunneling expression for the current-voltage (I-V) characteristic can be analytically inverted so that an exact expression for the voltage-current (V-I) characteristic can be obtained. The solution of the resulting implicit equation is found using the Lambert W function, i.e. the solution of the transcendental equation wew = x. The reported expressions are supported by experimental I-V curves measured in thin (≈5 nm) SiO2 films in MOS capacitors. The analysis includes the case of a tunneling oxide with a large series resistance. For practical purposes, a closed-form expression for W based on a Padé-type approximation is also provided. © 2011 Elsevier Ltd. All rights reserved.

AB - It is shown in this communication that the Fowler-Nordheim (FN) tunneling expression for the current-voltage (I-V) characteristic can be analytically inverted so that an exact expression for the voltage-current (V-I) characteristic can be obtained. The solution of the resulting implicit equation is found using the Lambert W function, i.e. the solution of the transcendental equation wew = x. The reported expressions are supported by experimental I-V curves measured in thin (≈5 nm) SiO2 films in MOS capacitors. The analysis includes the case of a tunneling oxide with a large series resistance. For practical purposes, a closed-form expression for W based on a Padé-type approximation is also provided. © 2011 Elsevier Ltd. All rights reserved.

KW - Fowler-Nordheim

KW - MOS

KW - Tunneling

U2 - 10.1016/j.sse.2011.03.015

DO - 10.1016/j.sse.2011.03.015

M3 - Article

SN - 0038-1101

VL - 61

SP - 93

EP - 95

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect

Abstract

Keywords

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