Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO<inf>2</inf>/Pt RRAM Device

Meiyun Zhang, Shibing Long, Yang Li, Qi Liu, Hangbing Lv, Enrique Miranda, Jordi Suñé, Ming Liu

Research output: Contribution to journalArticleResearchpeer-review

8 Citations (Scopus)

Abstract

© 2016, The Author(s). The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). In this study, a statistical evaluation method is developed to analyze the filament structure evolution process in the reset operation of Cu/HfO2/Pt RRAM device. This method is based on a specific functional relationship between the Weibull slopes of reset parameters’ distributions and the CF resistance (Ron). The CF of the Cu/HfO2/Pt device is demonstrated to be ruptured abruptly, and the CF structure of the device has completely degraded in the reset point. Since no intermediate states are generated in the abrupt reset process, it is quite favorable for the reliable and stable one-bit operation in RRAM device. Finally, on the basis of the cell-based analytical thermal dissolution model, a Monte Carlo (MC) simulation is implemented to further verify the experimental results. This work provides inspiration for RRAM reliability and performance design to put RRAM into practical application.
Original languageEnglish
Article number269
JournalNanoscale Research Letters
Volume11
Issue number1
DOIs
Publication statusPublished - 1 Dec 2016

Keywords

  • Conductive filament (CF)
  • Monte Carlo simulator
  • RRAM
  • Structure evolution

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