Analysis of the quasi-saturation region of high voltage VDMOS devices

J. Rebollo; E. Figueras; J. Millán; E. Lora-Tamayo; F. Serra-Mestres

doi:https://doi.org/10.1016/0038-1101(87)90145-6

Analysis of the quasi-saturation region of high voltage VDMOS devices

J. Rebollo, E. Figueras, J. Millán, E. Lora-Tamayo, F. Serra-Mestres

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

6 Citations (Scopus)

Abstract

The effect of the epitaxial layer on the quasi-saturation region of the ID(VD) characteristic of a high voltage n-channel VDMOS structure is analysed. The proposed model takes into account the cylindrical shape of the P-well/N--epilayer junction and the pinching effect of the current between neighbouring cells. © 1987.

Original language	English
Pages (from-to)	177-180
Journal	Solid State Electronics
Volume	30
DOIs	https://doi.org/10.1016/0038-1101(87)90145-6
Publication status	Published - 1 Jan 1987

Access to Document

https://doi.org/10.1016/0038-1101(87)90145-6

Cite this

@article{8a86c924b64741bf91acfc7f56a0cb9e,

title = "Analysis of the quasi-saturation region of high voltage VDMOS devices",

abstract = "The effect of the epitaxial layer on the quasi-saturation region of the ID(VD) characteristic of a high voltage n-channel VDMOS structure is analysed. The proposed model takes into account the cylindrical shape of the P-well/N--epilayer junction and the pinching effect of the current between neighbouring cells. {\textcopyright} 1987.",

author = "J. Rebollo and E. Figueras and J. Mill{\'a}n and E. Lora-Tamayo and F. Serra-Mestres",

year = "1987",

month = jan,

day = "1",

doi = "https://doi.org/10.1016/0038-1101(87)90145-6",

language = "English",

volume = "30",

pages = "177--180",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Analysis of the quasi-saturation region of high voltage VDMOS devices

AU - Rebollo, J.

AU - Figueras, E.

AU - Millán, J.

AU - Lora-Tamayo, E.

AU - Serra-Mestres, F.

PY - 1987/1/1

Y1 - 1987/1/1

N2 - The effect of the epitaxial layer on the quasi-saturation region of the ID(VD) characteristic of a high voltage n-channel VDMOS structure is analysed. The proposed model takes into account the cylindrical shape of the P-well/N--epilayer junction and the pinching effect of the current between neighbouring cells. © 1987.

AB - The effect of the epitaxial layer on the quasi-saturation region of the ID(VD) characteristic of a high voltage n-channel VDMOS structure is analysed. The proposed model takes into account the cylindrical shape of the P-well/N--epilayer junction and the pinching effect of the current between neighbouring cells. © 1987.

U2 - https://doi.org/10.1016/0038-1101(87)90145-6

DO - https://doi.org/10.1016/0038-1101(87)90145-6

M3 - Article

VL - 30

SP - 177

EP - 180

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

ER -

Analysis of the quasi-saturation region of high voltage VDMOS devices

Abstract

Access to Document

Fingerprint

Cite this