Abstract
The effect of the epitaxial layer on the quasi-saturation region of the ID(VD) characteristic of a high voltage n-channel VDMOS structure is analysed. The proposed model takes into account the cylindrical shape of the P-well/N--epilayer junction and the pinching effect of the current between neighbouring cells. © 1987.
Original language | English |
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Pages (from-to) | 177-180 |
Journal | Solid State Electronics |
Volume | 30 |
DOIs | |
Publication status | Published - 1 Jan 1987 |