The effect of the epitaxial layer on the quasi-saturation region of the ID(VD) characteristic of a high voltage n-channel VDMOS structure is analysed. The proposed model takes into account the cylindrical shape of the P-well/N--epilayer junction and the pinching effect of the current between neighbouring cells. © 1987.
|Journal||Solid State Electronics|
|Publication status||Published - 1 Jan 1987|