Analysis of the quasi-saturation region of high voltage VDMOS devices

J. Rebollo, E. Figueras, J. Millán, E. Lora-Tamayo, F. Serra-Mestres

Research output: Contribution to journalArticleResearchpeer-review

6 Citations (Scopus)

Abstract

The effect of the epitaxial layer on the quasi-saturation region of the ID(VD) characteristic of a high voltage n-channel VDMOS structure is analysed. The proposed model takes into account the cylindrical shape of the P-well/N--epilayer junction and the pinching effect of the current between neighbouring cells. © 1987.
Original languageEnglish
Pages (from-to)177-180
JournalSolid State Electronics
Volume30
DOIs
Publication statusPublished - 1 Jan 1987

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