Analysis of the post-breakdown current in HfO<inf>2</inf>/TaN/TiN gate stack MOSFETs for low applied biases

E. Miranda; K. L. Pey; R. Ranjan; C. H. Tung

doi:https://doi.org/10.1016/j.mee.2007.04.012

Analysis of the post-breakdown current in HfO<inf>2</inf>/TaN/TiN gate stack MOSFETs for low applied biases

E. Miranda, K. L. Pey, R. Ranjan, C. H. Tung

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

1 Citation (Scopus)

Abstract

A thorough analysis of the post-breakdown current-voltage characteristics in HfO2high-κ/TaN/TiN gate stacks for low positive applied biases reveals an apparent band gap narrowing of the silicon substrate at the very location of the leakage site. This effect may be caused by the migration of gate material through the percolation path during the breakdown runaway. Additionally, the voltage dependence of the current suggests that the origin of the leakage current is thermal generation within the depletion region close to the breakdown spot. A simple analytical model to deal with this current is proposed. © 2007 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1960-1963
Journal	Microelectronic Engineering
Volume	84
DOIs	https://doi.org/10.1016/j.mee.2007.04.012
Publication status	Published - 1 Sep 2007

Keywords

High-κ
MOS
Post-breakdown

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title = "Analysis of the post-breakdown current in HfO2/TaN/TiN gate stack MOSFETs for low applied biases",

abstract = "A thorough analysis of the post-breakdown current-voltage characteristics in HfO2high-κ/TaN/TiN gate stacks for low positive applied biases reveals an apparent band gap narrowing of the silicon substrate at the very location of the leakage site. This effect may be caused by the migration of gate material through the percolation path during the breakdown runaway. Additionally, the voltage dependence of the current suggests that the origin of the leakage current is thermal generation within the depletion region close to the breakdown spot. A simple analytical model to deal with this current is proposed. {\textcopyright} 2007 Elsevier B.V. All rights reserved.",

keywords = "High-κ, MOS, Post-breakdown",

author = "E. Miranda and Pey, {K. L.} and R. Ranjan and Tung, {C. H.}",

year = "2007",

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T1 - Analysis of the post-breakdown current in HfO2/TaN/TiN gate stack MOSFETs for low applied biases

AU - Miranda, E.

AU - Pey, K. L.

AU - Ranjan, R.

AU - Tung, C. H.

PY - 2007/9/1

Y1 - 2007/9/1

N2 - A thorough analysis of the post-breakdown current-voltage characteristics in HfO2high-κ/TaN/TiN gate stacks for low positive applied biases reveals an apparent band gap narrowing of the silicon substrate at the very location of the leakage site. This effect may be caused by the migration of gate material through the percolation path during the breakdown runaway. Additionally, the voltage dependence of the current suggests that the origin of the leakage current is thermal generation within the depletion region close to the breakdown spot. A simple analytical model to deal with this current is proposed. © 2007 Elsevier B.V. All rights reserved.

AB - A thorough analysis of the post-breakdown current-voltage characteristics in HfO2high-κ/TaN/TiN gate stacks for low positive applied biases reveals an apparent band gap narrowing of the silicon substrate at the very location of the leakage site. This effect may be caused by the migration of gate material through the percolation path during the breakdown runaway. Additionally, the voltage dependence of the current suggests that the origin of the leakage current is thermal generation within the depletion region close to the breakdown spot. A simple analytical model to deal with this current is proposed. © 2007 Elsevier B.V. All rights reserved.

KW - High-κ

KW - MOS

KW - Post-breakdown

U2 - https://doi.org/10.1016/j.mee.2007.04.012

DO - https://doi.org/10.1016/j.mee.2007.04.012

M3 - Article

VL - 84

SP - 1960

EP - 1963

ER -