Analysis of the evolution of the trapped charge distributions in 10 nm SiO2 films during DC and bipolar dynamic stress. Proceedings of the 8th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 97)

R Rodriguez, M Nafría, J Suñé, X Aymerich, N Labat (Editor), A Touboul (Editor)

Research output: Book/ReportProceedingResearch

Original languageUndefined/Unknown
Place of Publication- (GB)
Number of pages4
Publication statusPublished - Jul 1997

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