Analysis of the evolution of the trapped charge distributions in 10 nm SiO2 films during DC and bipolar dynamic stress.: Proceedings of the 8th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 97)

R Rodriguez; M Nafría; J Suñé; X Aymerich; N Labat; A Touboul

Analysis of the evolution of the trapped charge distributions in 10 nm SiO2 films during DC and bipolar dynamic stress. Proceedings of the 8th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 97)

R Rodriguez, M Nafría, J Suñé, X Aymerich, N Labat (Editor), A Touboul (Editor)

Research output: Book/Report › Proceeding › Research

Original language	Undefined/Unknown
Place of Publication	- (GB)
Number of pages	4
Publication status	Published - Jul 1997

Cite this

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title = "Analysis of the evolution of the trapped charge distributions in 10 nm SiO2 films during DC and bipolar dynamic stress.: Proceedings of the 8th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 97)",

author = "R Rodriguez and M Nafr{\'i}a and J Su{\~n}{\'e} and X Aymerich",

editor = "N Labat and A Touboul",

year = "1997",

month = jul,

language = "Indefinido/desconocido",

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TY - BOOK

T1 - Analysis of the evolution of the trapped charge distributions in 10 nm SiO2 films during DC and bipolar dynamic stress.

T2 - Proceedings of the 8th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 97)

AU - Rodriguez, R

AU - Nafría, M

AU - Suñé, J

AU - Aymerich, X

A2 - Labat, N

A2 - Touboul, A

PY - 1997/7

Y1 - 1997/7

M3 - Libro de Actas

BT - Analysis of the evolution of the trapped charge distributions in 10 nm SiO2 films during DC and bipolar dynamic stress.

CY - - (GB)

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